Engineering topics

Abbaschian, Reza

Publications and source records attributed to Abbaschian, Reza.

10 records

NASA NTRS2003

Investigating Morphological Stability of Faceted Interfaces with Axial Heat Processing (AHP) Technique

Successful processing of homogeneous semiconductor single crystals from their melts depends strongly on precise control of thermal and fluid flow conditions near the solid/liquid interface. In this project, we utilize a novel crystal growth technique called Axial Heat Processing (AHP) that uses a baffle, positioned inside the melt near the interface, to supply and/or conduct heat axially to the interface. The baffle, which may or may not have a heater encased in it, can promote more stable and planar growth as well as reduce buoyancy driven convection. The latter is because the baffle reduces the aspect ratio of the melt as it separates the melt into three sections, above the baffle, in the feed gap between the baffle and the crucible wall, and below the baffle between the baffle base and the interface. AHP also enables a close monitoring and/or control of thermal boundaries near the solid/liquid interface during crystal growth by means of thermocouples placed in the baffle. The interface is kept planar when a heating element in the baffle is used. However, a proper choice of melt height is necessary to keep the interface planar when using the baffle without a heater. This study addresses the influence of melt height and growth velocity on the segregation profile of AHP-grown Sb doped Ge single crystals.

Abbaschian, Reza↗

NASA NTRS2001

Shuttle Flight Experiment on USMP-4: In Situ Monitoring of Crystal Growth Using MEPHISTO

This reports on the MEPHISTO-4 experiment on the Space Shuttle Columbia, STS-87, November 19-December 5, 1997. Involved were NASA; the University of Florida at Gainesville; groups from France that developed and built the furnace; the National Institute of Standards and Technology; The University of New South Wales, Australia; and Purdue University. This was a solidification study in which three long rods of Bismuth- 1 at.% Tin were directionally solidified. The goals were to solidify in an environment free of natural convection; to determine the relationship among solidification growth velocity, growth mode, and temperature; and determine the diffusivity of Sn in Bi. The flight samples grew with a planar solid/liquid interface at velocities less than 3.4 gm/s, and cellular growth was present at velocities greater than 6.7 um/s; grain orientation influenced the planar to cellular transition. The temperature gradient in the liquid was 204 K/cm. The s/l interface was flat with slight concavity. Diffusion-dominated conditions were present during MEPHISTO-4. The Seebeck technique was used to determine the s/I interface temperature during growth, however, to date, analysis of the Seebeck results has not yielded a reliable measurement of the interface temperature. The partition coefficient for Bi alloyed with Sn was measured, k = 0.029.

Abbaschian, Reza↗

NASA NTRS2001

In Situ Monitoring of Crystal Growth Using Mephisto

Experiments were carried out to study the morphological stability of Bi-1atomic% Sn alloys using the MEPHISTO directional solidification apparatus aboard Space Shuttle Columbia (STS-87, launched November 19, 1997). The research program involved collaboration of the University of Florida, Centre National d'Etudes Spatiales (France), NASA/Glenn Research Center, the National Institute of Standards and Technology, and the University of New South Wales (Australia). The experiments made use of the Seebeck technique to measure the interface temperature, the resistance change across the sample for determination of the interface velocity, and Peltier current pulsing for demarcation of the interface shape. These data were obtained in real-time during various melting/solidification cycles, and the experiments were controlled via telecommands. The Seebeck signal and temperature measurements in the space experiments, as well as morphological behavior of the solid/liquid interface, were found to be significantly different than those obtained from ground-based studies. For the space-based experiments, interface breakdown was observed at growth velocities of 6.7, 27, and 40 micrometers/s, but not at 1.8 and 3.3 micrometers/s. The results further indicate that the morphological stability threshold for some grain orientations is significantly enhanced, resulting in a staggered planar to cellular transition front. This report summarizes some of these findings.

Abbaschian, Reza↗

NASA NTRS2001

Morphological Stability of Faceted Interfaces

The major focus of this investigation is to study the fundamentals of layer spreading mechanisms during growth of doped Ge (a facet forming material), and to determine the conditions for morphological instability of vicinal solid-liquid interfaces. The investigation will also lead to the determination of the effect of dopants on the layer growth kinetics, step free energy, and dopant capture by the advancing ledges. The theoretical treatment of growth of faceted interfaces indicates that the kinetics of a step on a growing vicinal interface considerably depends on its angle of inclination, the melt concentration, and characteristics of flow currents in the melt. The morphological stability of the interface also depends on these parameters, as well as on the density and spreading velocity of the steps. However, the treatment of the instability of the interface by the layer growth mechanism is rather difficult because it requires exact knowledge of the thermal and solutal fields, hydrodynamics of the melt, and supercooling at the interface. The results of recent space experiments of the principal investigator involving directional solidification of faceted Bi-Sn alloys have shown that the morphological stability of various crystallographic orientations is significantly affected by the anistropy in interfacial properties of the faceted alloy in general, and the interface kinetics in particular. These findings have also raised many important and fundamental questions, particularly with respect to the behavior of interfacial steps, which need to be addressed via additional groundbased and microgravity experiments. For the present investigation we will use a novel crystal growth technique which provides axial heat flux close to the solid-liquid boundary. The Axial Heat Processing (AHP) technique allows for precise control and determination of the heat and mass transfer close to the crystallization front, and the establishment of a planar interface over the entire cross-section of the growing crystal.

Abbaschian, Reza↗

NASA NTRS2000

Bridgman Crystal Growth of an Alloy with Thermosolutal Convection Under Microgravity Conditions

The solidification of a dilute alloy (bismuth-tin) under Bridgman crystal growth conditions is investigated. Computations are performed in two dimensions with a uniform grid. The simulation includes the species concentration, temperature and flow fields, as well as conduction in the ampoule. Fully transient simulations have been performed, with no simplifying steady state approximations. Results are obtained under microgravity conditions for pure bismuth, and for Bi-0.1 at.%Sn and Bi-1.0 at.%Sn alloys, and compared with experimental results obtained from crystals grown in the microgravity environment of space. For the Bi-1.0 at.%Sn case the results indicate that a secondary convective cell, driven by solutal gradients, forms near the interface. The magnitude of the velocities in this cell increases with time, causing increasing solute segregation at the solid/liquid interface. The concentration-dependence of the melting temperature is incorporated in the model for the Bi-1.0 at.%Sn alloy. Satisfactory correspondence is obtained between the predicted and experimental results in terms of solute concentrations in the solidified crystal.

Simpson, James E.↗

NASA NTRS1999

In Situ Monitoring of Crystal Growth Using MEPHISTO, Mission STS 87-Program USMP-4: Experimental Analysis

This report summarizes the results of the In situ Monitoring of Crystal Growth Using MEPHISTO (Material por l'Etude des Phenomenes Interessant de la Solidification sur Terre et en Orbite) experiment on USMP-4. The report includes microstructural and compositional data obtained during the first year of the post flight analysis, as well as numerical simulation of the flight experiment. Additional analyses are being continued and will be reported in the near future. The experiments utilized MEPHISTO hardware to study the solidification and melting behavior of bismuth alloyed with 1 at% tin. The experiments involved repeated melting and solidification of three samples, each approximately 90 cm long and 6mm in diameter. Half of each sample also included a 2 mm. diameter growth capillary, to assist in the formation of single grain inside. One sample provided the Seebeck voltage generated during melting and freezing processes. Another one provided temperature data and Peltier pulsed demarcation of the interface shape for post flight analysis. The third sample provided resistance and velocity measurements, as well as additional thermal data. The third sample was also quenched at the end of the mission to preserve the interface composition for post flight determination. A total of more than 45cm of directionally solidified alloy were directionally solidified at the end of the flight for post mission structural and compositional characterization. Metallurgical analysis of the samples has shown that the interfacial kinetics play a key role in controlling the morphological stability of faceted alloys. Substantial differences were observed in the Seebeck signal between the ground-based experiments and the space-based experiments. The temperature gradient in the liquid for the ground-based experiments was also significantly lower than the temperature gradient in the liquid for the space-based experiments. Both of these observations indicate significant influence of liquid convection for the ground-based experiments.

Abbaschian, Reza↗

NASA NTRS1999

In-Situ Monitoring of a Bismuth-Tin Alloy Solidification Using MEPHISTO

Experiments were carried out to study the morphological stability of Bi- 1 atomic % Sn alloys using the MEPHISTO directional solidification apparatus aboard Space Shuttle Columbia (STS-87, launched Nov. 19, 1997) and in ground-based studies. The Seebeck signal and temperature measurements indicate that convection was significant for ground-based studies. In the space-based experiments, interface breakdown was observed at growth velocities of 6.7, 27, and 40 microns/sec, but not at 1.8 and 3.3 microns/sec.

Abbaschian, Reza↗

NASA NTRS1999

Numerical Simulations of Crystal Growth of an Alloy Under Microgravity Conditions

The directional solidification of a dilute binary alloy (Bi-1.0 at.%Sn)is investigated. Results are obtained at a gravity level of I pg. Computations are performed in two dimensions with a fixed, non-uniform grid. The simulation involves a solution of the species concentration equation (modified to account for solute rejection at the interface) and energy equation (modified to account for phase-change) for both the solid and liquid phases, in addition to the constitutive equations for describing convective flow in the melt. The effects of conductive heat transfer in the ampoule and in a capillary tube in the sample are included. To gauge the effects of including this growth capillary tube in the apparatus, simulations both with and without the capillary tube are presented and compared. Fully transient simulations have been performed; no simplifying steady-state approximations are used, however, the influence of solute on the melting temperature at the interface is not included. Both thermal and solutal convective cells are seen to form. Convective velocities are significantly damped inside the capillary, causing less segregation due to convection. As solidification proceeds beyond the capillary tube, longitudinal segregation arises as a result of the change in cross-sectional area of solidifying material. The magnitudes of the velocities in this cell increase significantly once the solid/liquid front passes beyond the end of the capillary tube; this causes a corresponding increase in the level of radial solute segregation in the solidified material.

Simpson, James E.↗

NASA NTRS1999

Directional Solidification of Bi-Sn on USMP-4

The experiments used MEPHISTO hardware to study the solidification and melting behavior of bismuth alloyed with 1 at% tin. Three samples, each approximately 900 mm long and 6mm in diameter, were used. A portion of each sample also included a 2 mm diameter growth capillary, to assist in the formation of a single grain. One sample provided the Seebeck voltage generated during melting and freezing processes. Another provided temperature data and Peltier pulsed demarcation of the interface shape for post flight analysis. The third sample provided resistance and growth velocity measurements, as well as additional thermal data. The third sample was also quenched at the end of the mission to preserve the composition of the liquid near the interface for post flight determination. A total of 450mm of directionally solidified samples were preserved for post mission structural and compositional characterization. Substantial differences were observed in the Seebeck signal between the ground-based experiments and the space-based experiments. The temperature gradient in the liquid for the ground-based experiments was significantly lower than the temperature gradient in the liquid for the space-based experiments.

Abbaschian, Reza↗

NASA NTRS1998

Melt Convection Effects in the Bridgman Crystal Growth of an Alloy Under Microgravity Conditions

The solidification of a dilute bismuth-tin alloy under Bridgman crystal growth conditions is investigated in support of NASA's MEPHISTO space shuttle flight experiment. Computations are performed in two-dimensions with a uniform grid. The simulation includes the species-concentration, temperature and flow fields, as well as conduction in the ampoule. Fully transient simulations have been performed; no simplifying steady state approximations are used. Results are obtained under microgravity conditions for pure bismuth, and Bismuth-0.1 at.% Sn and Bi-1.0 at.% Sn alloys. The concentration dependence of the melting temperature is neglected; the solid/liquid interface temperature is assumed to be the melting temperature of pure bismuth for all cases studied. For the Bi-1.0 at.% Sn case the results indicate that a secondary convective cell, driven by solutal gradients, forms near the interface. The magnitude of the velocities in this cell increases with time; this causes increasing solute segregation at the liquid/solid interface.

Simpson James E.↗