Engineering topics

Abedin, M. N.

Publications and source records attributed to Abedin, M. N..

16 records

NASA NTRS2010

Infrared Detectors Overview in the Short Wave Infrared to Far Infrared for CLARREO Mission

There exists a considerable interest in the broadband detectors for CLARREO Mission, which can be used to detect CO2, O3, H2O, CH4, and other gases. Detection of these species is critical for understanding the Earth?s atmosphere, atmospheric chemistry, and systemic force driving climatic changes. Discussions are focused on current and the most recent detectors developed in SWIR-to-Far infrared range for CLARREO space-based instrument to measure the above-mentioned species. These detector components will make instruments designed for these critical detections more efficient while reducing complexity and associated electronics and weight. We will review the on-going detector technology efforts in the SWIR to Far-IR regions at different organizations in this study.

Abedin, M. N.↗

NASA NTRS2008

Development and Evaluation of a High Sensitivity DIAL System for Profiling Atmospheric CO2

A ground-based 2-micron Differential Absorption Lidar (DIAL) CO2 profiling system for atmospheric boundary layer studies and validation of space-based CO2 sensors is being developed and tested at NASA Langley Research Center as part of the NASA Instrument Incubator Program. To capture the variability of CO2 in the lower troposphere a precision of 1-2 ppm of CO2 (less than 0.5%) with 0.5 to 1 km vertical resolution from near surface to free troposphere (4-5 km) is one of the goals of this program. In addition, a 1% (3 ppm) absolute accuracy with a 1 km resolution over 0.5 km to free troposphere (4-5 km) is also a goal of the program. This DIAL system leverages 2-micron laser technology developed under NASA's Laser Risk Reduction Program (LRRP) and other NASA programs to develop new solid-state laser technology that provides high pulse energy, tunable, wavelength-stabilized, and double-pulsed lasers that are operable over pre-selected temperature insensitive strong CO2 absorption lines suitable for profiling of lower tropospheric CO2. It also incorporates new high quantum efficiency, high gain, and relatively low noise phototransistors, and a new receiver/signal processor system to achieve high precision DIAL measurements. This presentation describes the capabilities of this system for atmospheric CO2 and aerosol profiling. Examples of atmospheric measurements in the lidar and DIAL mode will be presented.

Ismail, Syed↗

NASA NTRS2008

Progress of 2-micron Detectors for Application to Lidar Remote Sensing

AlGaAsSb/InGaAsSb heterojunction phototransistors were developed at Astropower, Inc under Laser Risk Reduction Program (LRRP) for operation in the 2-micron region. These phototransistors were optimized for 2-micron detection and have high quantum efficiency (>60%), high gain (>10(exp 3)) and low noise-equivalent- power (<5x10(exp -14) W/Hz), while operating at low bias voltage. One of these phototransistors was tested in lidar mode using the 2-micron CO2 Differential Absorption Lidar (DIAL) system currently under development under the Instrument Incubator Program (IIP) at NASA Langley. Lidar measurements included detecting atmospheric structures consisting of thin clouds in the mid-altitude and near-field boundary layer. These test results are very promising for the application of phototransistors for the two-micron lidar remote sensing. In addition, HgCdTe avalanche photodiodes (APD) acquired from Raytheon were used in atmospheric testing at 2-microns. A discussion of these measurements is also presented in this paper.

Abedin, M. N.↗

NASA NTRS2008

Infrared Detector Activities at NASA Langley Research Center

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

Abedin, M. N.↗

NASA NTRS2007

Far-Infrared Blocked Impurity Band Detector Development

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Hogue, H. H.↗

NASA NTRS2007

Phototransistors Development and their Applications to Lidar

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

Abedin, M. N.↗

NASA NTRS2006

Two-micron Detector Development using Sb-based Material Systems

NASA Langley Research Center (LaRC), in partnership with the University of Delaware (UD), developed AlGaAsSb/InGaAsSb custom-designed phototransistors in the 0.6-2.5 micron wavelength range for applications to laser remote sensing. The phototransistor s performance greatly exceeds the previously reported results at this wavelength range in the literature. The performances of the custom-designed phototransistor, such as responsivity, detectivity, and gain, are improved significantly as compared to the previously published detectors as well as commercial detectors. Detection in the 0.6- to 2.5- micron broadband with a single phototransistor will result in reduction or elimination of heavy and complex optical components now required for multiple wavelength detection in atmospheric remote sensors resulting in smaller, lighter, simpler instruments with higher performance. This high performance broadband phototransistor will eliminate the need for high power laser for active remote sensing and also the Si (1.0- micron cutoff) and InGaAs (extended 2.3- micron cutoff) detectors. The developed broadband phototransistor will be applicable for the next generation of space-based Earth observations and other planetary instruments for active and passive remote sensing with substantial reduction in size, complexity, and weight to measure water vapor, methane, and carbon dioxide in planetary atmospheres as well as aerosol, cloud, water vapor, O2, CO, and CO2 for a broad range of applications to Earth and Space Science Missions under Science Mission Directorate (SMD) research programs.

Abedin, M. N.↗

NASA NTRS2006

InGaAsSb/AlGaAsSb Heterojunction Phototransistors for Infrared Applications

High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10(exp 9) cmHz(exp 1/2)/W at 2 microns was obtained at 100 C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 C allows to increase the bias to 3V and enhance the detectivity to 8.7x10(exp 10) cmHz(exp 1/2)/W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 s at 2V and 100 C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10(exp -7) W/sq cm and 31.6 mW/sq cm.

Refaat, Tamer F.↗

NASA NTRS2006

Bias Selective Operation of Sb-Based Two-Color Photodetectors

Multicolor detectors have a strong potential to replace conventional single-color detectors in application dealing with the simultaneous detection of more than one wavelength. This will lead to the reduction of heavy and complex optical components now required for spectral discrimination for multi-wavelengths applications. This multicolor technology is simpler, lighter, compact and cheaper with respect to the single-color ones. In this paper, Sb-based two-color detectors fabrication and characterization are presented. The color separation is achieved by fabricating dual band pn junction on a GaSb substrate. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Three metal contacts were deposited to access the individual junctions. Surface morphology of multi-layer thin films and also device characteristics of quasi-dual band photodetector were characterized using standard optical microscope and electro-optic techniques respectively. Dark current measurements illustrated the diode behavior of both lattice-matched detector bands. Spectral response measurements indicated either independent operation of both detectors simultaneously, or selective operation of one detector, by the polarity of the bias voltage, while serially accessing both devices.

Abedin, M. N.↗

NASA NTRS2006

2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors

We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

Sulima, O. V.↗

NASA NTRS2005

Characterization of InGaAs Linear Array for Applications to Remote Sensing

An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 micron spectral range was characterized. The array has 1024x1 pixels with a 25 micron pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were measured while the array was uniformly illuminated at varying exposure levels. A photon transfer curve was generated by plotting noise as a function of average signal to obtain the camera gain constant. The spectral responsivity was also measured, and the quantum efficiency, read noise and full-well capacity were determined. This paper describes the characterization procedure, analyzes the experimental results, and discusses the applications of the InGaAs linear array to future earth and planetary remote sensing mission.

Garcia, Christopher S.↗

NASA NTRS1992

Method and apparatus for evaluating multilayer objects for imperfections

A multilayer object where the layers are arranged in a stacking direction is evaluated for imperfections such as voids, delaminations, and microcracks. First, an acoustic wave is transmitted into the object in the stacking direction via an appropriate transducer/waveguide combination. The wave propagates through the multilayer object and is received by another transducer/waveguide combination preferably located on the same surface as the transmitting combination. The received acoustic wave is correlated with the presence or absence of imperfections by generating pulse echo signals indicative of the received acoustic wave, wherein the successive signals form distinct groups over time. The respective peak amplitudes of each group are sampled and fitted to an exponential curve, wherein a substantial fit of approximately 80-90 percent indicates the absence of imperfections. Alternatively, the time interval between distinct groups can be measured, wherein equal intervals indicate the absence of imperfections and unequal intervals indicate the presence of imperfections.

Heyman, Joseph S.↗

NASA NTRS1992

Assessment of aircraft structural integrity by detecting disbonds through ultrasonic scanning

A study of nondestructive evaluation of aircraft bonded joints using the contact scanning technique is presented. Reflected signals acquired through the contacting transducer characterize the test region as being bonded or disbonded. Ultrasonic signals are attenuated more rapidly in the bonded regions when compared to disbonded regions. A peak amplitude based method and an artificial neural network are used to classify the signals. Results obtained using an artificial neural network exhibited significant insensitivity to signal variation when compared to the peak amplitude. Very good agreement is observed between results obtained using the present technique and those obtained using immersion scanning.

Abedin, M. N.↗

NASA NTRS1992

OSEE responses on D6AC steel due to sample preparation

A cleaning procedure and a contamination method developed at NASA Langley to contaminate sample surfaces with a certain thickness of HD-2 grease are demonstrated. Varying levels of contamination are obtained. Optically stimulated electron emission (OSEE) measurements were performed using the parallel electric field cell and the Pat scan device for clean and contaminated samples with a known amount of common contaminant. The OSEE response is found to be more sensitive for the clean sample than for the contaminated one. It is concluded that the OSEE measurements obtained using these techniques are sensitive to surface conditions and the contaminant thickness variations. It is also shown that the wavelength of illuminating light can have a profound effect on OSEE current levels.

Abedin, M. N.↗

NASA NTRS1992

A comparative study of experimental and simulated ultrasonic pulse-echo signals from multilayered structures

The effect on the system acoustic response of variations in the adhesive thickness, coupling thickness, and paint thickness is considered. Both simulations and experimental measurements are used to characterize and classify A-scans from test regions, and to study the effects of various parameters such as paint thickness and epoxy thickness on the variations in the reflected signals. A 1D model of sound propagation in multilayered structures is used to verify the validity of the measured signals, and is also used to computationally generate signals for a class of test locations with gradually varying parameters. This approach exploits the ability of numerical simulations to provide a good understanding of the ultrasonic pulses reflected at disbonds.

Abedin, M. N.↗

NASA NTRS1992

Optically stimulated electron emission - Current-voltage response and spectral sensitivity

A highly reproducible optically stimulated electron emission (OSEE) response steel was achieved in laboratory conditions through suppression of surface photochemistry by replacing air with argon. This permitted the characterization of the OSEE process on D6AC steel as a photodiode. With a low-pressure mercury light source, most of the OSEE current is attributed to photoelectrons released by the 185-nm mercury line with only about 5 percent of the photocurrent associated with the 254-nm line. The forward current-voltage characteristic of the OSEE diode is linear for small fields changing to a square root response at larger fields. These results are all consistent with established theories.

Welch, Christopher S.↗