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Ackley, D. E.

Publications and source records attributed to Ackley, D. E..

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Ackley, D. E.

Phase-Locked Laser Array With Nonuniform Spacing

To obtain phase-locked array that reliably produces single far-field lobe, configuration includes lasing stripes not placed on regular centers but located in regular way with nonuniform centers (i.e., with spacing determined by some function). Alternatively, lasing stripes placed on set of periodic arrays with different stripe-to-stripe centers interlaced onto single chip or placed in structure in which stripe-to-stripe spacing is random or pseudorandom. Monolithic, phase-locked, semiconductor-laser array design produces output laser beam comprising substantially single lobe.

Ackley, D. E.

Coupled-mode analysis of gain and wavelength oscillation characteristics of diode laser phased arrays

The lasing wavelengths and gain characteristics of the modes of phase-locked arrays of channel-substrate-planar (CSP) lasers are presented. The gain values for the array modes are determined from complex coupling coefficients calculated using the fields of neighboring elements of the array. The computations show that, for index guided lasers which have nearly planar phase fronts, the highest order array mode will be preferred. The 'in-phase' or fundamental mode, which produces only one major lobe in the far-field radiation pattern, has the lowest modal gain of all array modes. The modal gain differential between the highest order and fundamental modes is less than 10/cm for weak coupling between the elements.

Butler, J. K.

Phase-locked injection laser arrays with nonuniform stripe spacing

A new type of phase-locked injection laser array which utilises nonuniform spacing between the lasing stripes has been studied. The variation in spacing alters the stripe-to-stripe coupling which modifies the array mode selection. Arrays that operate with a single far-field lobe have been fabricated.

Ackley, D. E.

Coupled-mode analysis of phase-locked injection laser arrays

A coupled-mode analysis has been developed to describe the output of phase-locked injection laser arrays. It is shown that an array of emitters with weak coupling can only operate in a set of discrete modes determined by the number of and the spacing of the emitters. The interaction between emitters leads to a splitting of the common frequency of operation that can be estimated from the coupling strength. The coupled-mode analysis is compared to calculations based on simple diffraction theory. A consequence of the analysis is an explanation for the commonly observed discrepancy between experimentally observed far-field lobe widths and those predicted by simple diffraction theory.

Butler, J. K.