Engineering topics

Adam, Roman

Publications and source records attributed to Adam, Roman.

3 records

DOE OSTI2024

THz generation by exchange-coupled spintronic emitters

Abstract The mechanism of THz generation in ferromagnet/metal (F/M) bilayers has been typically ascribed to the inverse spin Hall effect (ISHE). Here, we fabricated Pt/Fe/Cr/Fe/Pt multilayers containing two back-to-back spintronic THz emitters separated by a thin ( t Cr ≤ 3nm) wedge-shaped Cr spacer. In such an arrangement, magnetization alignment of the two Fe films can be controlled by the interplay between Cr-mediated interlayer exchange coupling (IEC) and an external magnetic field. This in turn results in a strong variation of the THz amplitude A , with A ↑ ↓ reaching up to 14 times A ↑ ↑ (arrows indicate the relative alignment of the magnetization of the two magnetic layers). This observed functionality is ascribed to the interference of THz transients generated by two closely spaced THz emitters. Moreover, the magnetic field dependence A ( H ) shows a strong asymmetry that points to an additional performance modulation of the THz emitter via IEC and multilayer design.

Adam, Roman↗

DOE OSTI2023

Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Bilayers of ferromagnetic and heavy metal nanolayers excited with femtosecond laser pulses emit subpicosecond bursts of electromagnetic radiation with spectral frequencies up to several THz. We fabricated such spintronic THz emitters containing various ferromagnetic materials with vastly different magnetic remanence, saturation magnetization, and coercive fields. In all cases, the THz amplitude versus magnetic-field dependence follows the independently measured magnetization hysteresis loops and the THz polarization direction is perpendicular to the sample’s magnetization M, both consistent with the inverse spin Hall effect (ISHE) as the physical origin. The mV-level signals of observed THz transient also favor the ISHE over the anomalous Nernst effect (ANE). The M(T) variation governs the temperature dependence of the THz generation. Emitters with weakly remanent ferromagnets are magnetic-field tunable, while moderately and strongly remanent ferromagnets, once magnetized, allow intense THz generation even without an external field, nevertheless exhibiting low susceptibility to magnetic perturbations if the hysteresis loop is square. Hence, exploiting the magnetic properties of the ferromagnetic layer enables tailoring of weakly temperature-dependent spintronic THz emitters. Finally, we explored the applicability of perovskite oxide materials such as La-Sr-Mn-O (LSMO) for THz transient generation. We detected weak (<40-μV amplitude) THz emissions from both LSMO/Au and pure LSMO nanostructures with no sign flip upon the sample reversal. Furthermore, we excluded the ISHE and believe it was likely governed by the ANE in the thick-film regime, although we cannot exclude the transient demagnetization mechanism.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm 2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm 2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm 2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm -1 down to ~288 cm -1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm -1 , which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies.

36 MATERIALS SCIENCE↗