Engineering topics

Addis, F. W.

Publications and source records attributed to Addis, F. W..

5 records

NASA NTRS1991

GaAs solar cell photoresponse modeling using PC-1D V2.1

Photoresponse data of high efficiency GaAs solar cells were analyzed using PC-1D V2.1. The approach required to use PC-1D for photoresponse data analysis, and the physical insights gained from performing the analysis are discussed. In particular, the effect of Al(x)Ga(1-x)As heteroface quality was modeled. Photoresponse or spectral quantum efficiency is an important tool in characterizing material quality and predicting cell performance. The strength of the photoresponse measurement lies in the ability to precisely fit the experimental data with a physical model. PC-1D provides a flexible platform for calculations based on these physical models.

Huber, D. A.↗

NASA NTRS1989

Investigation of high efficiency GaAs solar cells

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

Olsen, Larry C.↗

NASA NTRS1987

Electro-optical characterization of GaAs solar cells

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance.

Olsen, Larry C.↗

NASA NTRS1986

Investigation of high efficiency silicon MINP solar cells

This paper includes results of both theoretical and experimental studies of silicon metal insulator n/p cells. Performance calculations are described which give expected efficiencies as a function of base resistivity. Fabrication and characterization of cells are discussed, and detailed analyses of current loss mechanisms are presented. Using 0.2-ohm cm FZ material and Mg tunneling contacts, AM 1 efficiencies in the range of 16.5-17 percent have been achieved.

Olsen, L. C.↗

NASA NTRS1985

Silicon MINP solar cells

The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

Olsen, L. C.↗