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Adell, Philippe

Publications and source records attributed to Adell, Philippe.

Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

Adell, Philippe↗

Single-event transient testing of low dropout PNP series linear voltage regulators

As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

Allen, Gregory↗

Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies

Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide. In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup

Barnaby, Hugh↗

Qualification of emerging point-of-load regulators for next generation power systems

As demand for high-speed, on-board, digital-processing integrated circuits (ICs) on spacecraft increases (FPGAs and DSPs in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The objectives of this study are to first identify reliability issues or additional space reliability requirements that might not be addressed for commercial application of POL converters; second, to study the performances of existing or emerging POL converters (including linear regulators) within a practical two-stage power distribution architecture; and, finally, to identify points of failure at extreme temperatures (low and high) beyond specifications.

Leon, Rosa↗

Irradiation with molecular hydrogen as an accelerated total dose hardness assurance test method for bipolar linear circuits

High dose rate irradiation with hydrogen stress is proposed as an accelerated total dose test method for bipolar linear circuits. The method is validated across process and circuit technologies with five parts that are commonly used in space: a comparator (LM193 from National Semi-conductor), a voltage regulator (HSYE-117 RH from Intersil), a voltage reference (LT1019 from Linear Technology), a JFET input op amp (OP42 from Analog Devices) and a temperature transducer (AD590 from Analog Devices). The testing technique could rapidly establish an upper bound to the low dose rate response of parts in space and help with the part selection process in the design phase of a mission. The technology dependence and the viability of this technique are qualitatively explored using a physical model describing the dose rate response and the effect of hydrogen in bipolar technologies. The model uses four core processes: 1) space charge effects, 2) free electron/hole pair recombination, hole-hydrogen defect reactions in the oxides and 4) proton depassivation of dangling bonds at the Si/SiO2 interface. Radiation hardness assurance implications are discussed.

Pease, Ron↗

Understanding how molecular hydrogen impacts the total dose and dose rate response of linear bipolar circuits

Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Arizona State University (ASU) and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar micro-circuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunities to improve device performance. The general objectives of this program are to: 1. Determine the extent to which hydrogen contamination affects the total dose and dose rate response of linear bipolar circuits; 2. Develop a model that will enable the prediction of high dose rate (HDR) and low dose rate (LDR) response asymptotes and transition dose rates as a function of total dose, temperature, pressurized hydrogen, defect precursors, and other process dependent variables; 3. Explore the possibility of an accelerated hardness assurance method and possible hardening approaches; and 4. Extend the work to other technologies that have total dose response affected by hydrogen contamination.In this document, we xperimentally demonstrate with test transistors and circuits that hydrogen is correlated with ELDRS in bipolar linear circuits. We show that the amount of hydrogen determines: 1) the total dose response versus dose rate and 2) the transition dose rates between the high and low dose rate responses. The experimental results are supported with a steady state drift/diffusion analytical model as well as modeling calculations using COMSOL Multiphysics.

Pease, Ron↗

Assessing and mitigating radiation effects in Xilinx FPGAs

The main purpose of this guideline is to document the current understanding of the effort and tradeoffs involved in using SRAM-based FPGAs with maximum achievable upset tolerance. This guideline summarizes the different testing strategies to be considered when assessing the SEE tolerance of SRAM-based FPGAs. For critical applications, in-beam testing of flight designs is strongly recommended in order to verify that the upset mitigation is working as well as the designer intended. At present, there are four manufacturers (Actel, Xilinx, Atmel, and Aeroflex) offering six FPGA types to the military market (i.e., some military spec screening and testing are specified) and four device types to the aerospace application market, which indicates that the manufacturers have added radiation parameter specifications. There is also a Honeywell and BAE Systems device that has been under development for several years, but it does not appear to be available yet; inquiries to Honeywell’s military/aerospace marketing arm on this product have been unanswered.

Allen, Greg↗