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Adolphsen, J. W.

Publications and source records attributed to Adolphsen, J. W..

8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Space Shuttle flight test results of the Cosmic Ray Upset Experiment

CRUX is the first engineering flight experiment designed to test for the incidence of upsets in microcircuits by energetic particles. Harris HM 6504 4K x 1 static CMOS RAM's were used as the test device types in a 1.3 megabit memory which flew on two Shuttle flights. Ground (cyclotron) test information led to a prediction of about one error every 1000 days. No errors were experienced in 10 days of flight. While data were not in conflict with the error prediction and do support it, quantitative validation of the modeling for upsets is not statistically possible. Follow-on hardware (CRUX III) incorporates five different state-of-the-art microcircuits, and is scheduled for flight in October 1984.

Adolphsen, J. W.↗
NASA NTRS1980

GSFC Preferred Parts List PPL-15

A listing is presented of preferred electronic parts, part upgrading procedures, part derating guidelines, and part screening procedures to be used in the selection, procurement, and application of parts for Goddard Space Flight Center space systems and ground support equipment.

Adolphsen, J. W.↗
NASA NTRS1976

A survey of particle contamination in electronic devices

The experiences are given of a number of National Aeronautics and Space Administration (NASA) and Space and Missile System Organization (SAMSO) contractors with particle contamination, and the methods used for its prevention and detection, evaluates the bases for the different schemes, assesses their effectiveness, and identifies the problems associated with each. It recommends specific short-range tests or approaches appropriate to individual part-type categories and recommends that specific tasks be initiated to refine techniques and to resolve technical and application facets of promising solutions.

Adolphsen, J. W.↗
NASA NTRS1974

SEM evaluation of metallization on semiconductors

A test method for the evaluation of metallization on semiconductors is presented and discussed. The method has been prepared in MIL-STD format for submittal as a proposed addition to MIL-STD-883. It is applicable to discrete devices and to integrated circuits and specifically addresses batch-process oriented defects. Quantitative accept/reject criteria are given for contact windows, other oxide steps, and general interconnecting metallization. Figures are provided that illustrate typical types of defects. Apparatus specifications, sampling plans, and specimen preparation and examination requirements are described. Procedures for glassivated devices and for multi-metal interconnection systems are included.

Fresh, D. L.↗
NASA NTRS1972

Using the scanning electron microscope on the production line to assure quality semiconductors

The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.

Adolphsen, J. W.↗
NASA NTRS1971

Use a SEM on a production line

Scanning electron microscope for poor metallization detection in manufacturing cycle of semiconductor devices

Adolphsen, J. W.↗