Engineering topics
Aktas, O.
Publications and source records attributed to Aktas, O..
Level structures of 56,58 Ca cast doubt on a doubly magic 60 Ca
Gamma decays were observed in 56 Ca and 58 Ca following quasi-free one-proton knockout reactions from 57,59 Sc beams at ≈200 MeV/nucleon. For 56 Ca, a γ ray transition was measured to be 1456(12) keV, while for 58 Ca an indication for a transition was observed at 1115(34) keV. Both transitions were tentatively assigned as the $2^{+}_{1}\rightarrow0^{+}_{gs}$ decays, and were compared to results from ab initio and conventional shell-model approaches. A shell-model calculation in a wide model space with a marginally modified effective nucleon-nucleon interaction depicts excellent agreement with experiment for $2^{+}_{1}$ level energies, two-neutron separation energies, and reaction cross sections, corroborating the formation of a new nuclear shell above the N = 34 shell. Its constituents, the 0$f$ 5/2 and 0$g$ 9/2 orbitals, are almost degenerate. This degeneracy precludes the possibility for a doubly magic 60 Ca and potentially drives the dripline of Ca isotopes to 70 Ca or even beyond.
Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited).
Abstract not provided.
Investigation of the ground-state spin inversion in the neutron-rich Cl 47 , 49 isotopes
A first γ -ray study of Cl 47 , 49 spectroscopy was performed at the Radioactive Isotope Beam Factory with Ar 50 projectiles at 217 MeV/nucleon, impinging on the liquid hydrogen target of the MINOS device. Prompt deexcitation γ rays were measured with the NaI(Tl) array DALI2 + . Through the one-proton knockout reaction Ar 50 ( p , 2 p ) , a spin assignment could be determined for the low-lying states of Cl 49 from the momentum distribution obtained with the SAMURAI spectrometer. A spin-parity J π = 3 / 2 + is deduced for the ground state of Cl 49 , similar to the recently studied N = 32 isotope K 51 . The evolution of the energy difference E ( 1 / 2 1 + ) - E ( 3 / 2 1 + ) is compared to state-of-the-art theoretical predictions.
Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics.
Abstract not provided.