Engineering topics

Albin, David S.

Publications and source records attributed to Albin, David S..

8 records

DOE OSTI2023

Intra-Grain Local Luminescence Properties of CdSe0.1Te0.9 Thin Films

We report on the local photoluminescence properties of grains and grain boundaries of CdSe 0.1 Te 0.9 thin film deposited by the colossal grain growth method using a wide-field hyperspectral imaging technique. We observed significant variations in the photoluminescence intensity of both individual grains and also that of grain boundaries. Multiple sub-bandgap defect peaks were captured in the luminescence spectra in the energy range 1.2 eV to 1.6 eV. The intensity and peak positions of these sub-gap emissions were slightly different among various grains and at the grain boundaries, revealing intra- and inter-grain variations in these polycrystalline thin films. A recently-developed density-of-states based photoluminescence model was extended to include multiple peaks and was fitted to the data. We observed that at a fixed temperature, the quasi-Fermi level splitting energy and a disordered energy parameter can be extracted locally by use of this model.

data models↗

DOE OSTI2023

Imaging local luminescence variations in CdSe 0.1 Te 0.9 thin films grown by the colossal grain growth process

Clear visualization and understanding of luminescence properties of grain interiors and grain boundaries in polycrystalline thin-film photovoltaic materials are crucial to achieving high-performance solar cells. Luminescence-based measurements, for example, reveal sub-bandgap energetic disorder or impurity-related radiative transitions in these materials, and when performed in the absolute scale, they can show the extent of voltage-limiting non-radiative recombination. Here we use a hyperspectral imaging technique to investigate inter- and intra-grain photoluminescence variations in polycrystalline CdSe 0.1 Te 0.9 films made by the colossal grain growth process. We observe that grain boundaries show higher luminescence than grain interiors for all energies below the bandgap energy. Multiple distinct sub-bandgap defect transitions are detected and determined to be related to donor-acceptor pair impurities. A comparison of the excitation-intensity-dependent photoluminescence at the grain boundaries with grain interiors suggests that carrier concentration is higher at grain boundaries. This finding is supported by photoemission electron microscopy imaging of the films, showing approximately 70 meV upward energy shift in the band structure at the grain boundaries. Finally, we investigate a dramatic thermal quenching behavior related to the donor-acceptor pairs luminescence over a temperature range and use a rate-equation model to attribute it to the sudden redirection of the radiative recombination channels to non-radiative channels with increasing temperature.

14 SOLAR ENERGY↗

DOE OSTI2022

Investigating the Role of Copper in Arsenic Doped Cd(Se,Te) Photovoltaics

The open circuit voltage (VOC) deficit in Cd(Se,Te)-based photovoltaics remains a critical obstacle for pushing the technology closer to theoretical performance limits. Arsenic doping has become a dominant and promising route to achieve the higher p-type carrier concentrations necessary for higher VOC, but challenges associated with this alternate defect chemistry and higher doping density have hindered progress. Here we show that while arsenic doping enables high carrier concentrations (>1016 cm-3), co-doping with copper can provide a boost to VOC without a significant change to carrier concentration. A large data set is initially used to explore current-voltage and capacitance-voltage trends associated with arsenic doped devices with and without copper. A smaller subset is then used to probe these trends using a wide variety of characterization techniques. Copper is found to facilitate reduced interface recombination and potentially improved bulk absorber characteristics, though the mechanisms for these improvements are not yet clear. Despite the improved performance of co-doped devices, VOC is still far below its potential especially for highly doped devices. Low emitter doping in conjunction with high absorber doping seems to be a plausible cause for this significant deficit, though other device properties may exacerbate this problem.

CdSeTe↗

DOE OSTI2021

Colossal grain growth in Cd(Se,Te) thin films and their subsequent use in CdTe epitaxy by close-spaced sublimation

Many technologies deposit thin films on inexpensive substrates, resulting in small grains due to classic nucleation and grain growth theory. For example, state-of-the-art solar cells are made by depositing CdSeTe and CdTe layers on inexpensive glass coated with nanocrystalline transparent conducting oxides (TCOs), like SnO 2 . Characteristically, the grain size of these films is on the order of the film thickness, i.e. a few microns. CdTe small-grain films have poor electro-optical properties and require CdCl 2 passivation which fails to fully passivate grain boundaries, causes carrier compensation, and prevents implementing other II–VI alloys and materials to improve performance. Here, we present a method to increase grain size to 1 mm in CdSe x Te 1-x thin films deposited on glass/TCO substrates without CdCl 2 treatment. The colossal grain growth is driven by mechanisms distinct from classic nucleation, grain growth, and Ostwald ripening and only occurs at low selenium content (x ~ 0.1). We also demonstrate how these films can serve as templates for subsequent large-grain epitaxy of other compositions like CdTe, again without exposure to CdCl 2 . The results open new paths for thin film solar cell technology, and thin film devices in general.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x1017 cm-3–1x1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2020

Thin-Film Solar Cells with 19% Efficiency by Thermal Evaporation of CdSe and CdTe

CdTe-based solar cells exhibiting 19% power conversion efficiency were produced using widely available thermal evaporation deposition of the absorber layers on SnO2-coated glass with or without a transparent MgZnO buffer layer. Evaporating CdSe and CdTe sequentially by thermal evaporation and subsequent CdCl2 annealing establishes efffective CdSeTe band grading as well as dense, large-grain films. These results show that high-performance II-VI photovoltaics can be made by inexpensive, commercially available evaporation systems without the need to build customized equipment, enabling CdTe photovoltaics research and manufacturing to be more accessible to the broader photovoltaics community.

14 SOLAR ENERGY↗

DOE OSTI2019

Radiative Efficiency and Charge-Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures

CdTe-based photovoltaics is a rapidly developing energy technology with one of the lowest levelized costs of electricity. But nonradiative Shockley-Read-Hall (SRH) recombination limits the efficiency of CdTe solar cells. Partial mitigation of bulk and grain-boundary SRH recombination was achieved by alloying CdTe with Se, and CdSe x Te 1-x absorbers are used in high-efficiency solar cells. Recently, interface recombination was significantly reduced with alumina passivation, but other properties of Al 2 O 3 /CdSe x Te 1-x /Al 2 O 3 heterostructures have not yet been investigated. Herein, further progress in understanding and developing polycrystalline heterostructures with x = 0.2 is reported. It is shown that external photoluminescence quantum yield is increased to 0.2%, quasi-Fermi-level splitting to 950 mV, minority carrier lifetimes to 750 ns, and mobility to 100 cm 2 Vs -1 . Such polycrystalline CdSe x Te 1-x electronic characteristics match or exceed CdTe single-crystal properties. The resulting charge-carrier diffusion length of ≈14 $\mu$m is several times greater than the absorber thickness in test structures and in typical CdTe solar cells. Herein, with passivation and absorbers, polycrystalline CdSeTe solar cell open-circuit voltage is increased from the current 76% of the Shockley-Queisser limit to 82%, or close to 1 V is reported.

14 SOLAR ENERGY↗

DOE OSTI2019

From Modules to Atoms: Techniques and Characterization for Identifying and Understanding Device-Level Photovoltaic Degradation Mechanisms

This report documents how degraded modules are analyzed for the characterization of cell-level performance reduction. The primary degradation topics presented here are 1) potential-induced degradation, 2) defect metastability and impurity diffusion, and 3) partial-shading-induced reverse-bias breakdown. Imaging techniques, such as electroluminescence imaging, photoluminescence imaging, and lock-in thermography provide spatial information of full modules on the meter scale. Area of interest can then be imaged with higher spatial resolution by zooming in with fields of view near the mm scale. We document procedures for coring cell samples from selected regions of interest using mechanical drilling. The small samples are then of suitable size for various microscopic analyses using techniques such as scanning electron microscopy, time-of-flight secondary ion spectrometry, atomic force microscopy, electron beam induced current, transmission electron microscopy, and atom probe tomography, which can provide chemical, structural, and electrical characterization down to the atomic scale.

14 SOLAR ENERGY↗