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Albin, Sacharia

Publications and source records attributed to Albin, Sacharia.

Cross-fiber Bragg grating transducer

A transducer has been invented that uses specially-oriented gratings in waveguide a manner that allows the simultaneous measurement of physical phenomena (such as shear force, strain and temperature) in a single sensing element. The invention has a highly sensitive, linear response and also has directional sensitivity with regard to strain. The transducer has a waveguide with a longitudinal axis as well as two Bragg gratings. The transducer has a first Bragg grating associated with the waveguide that has an angular orientation .theta..sub.a relative to a perpendicular to the longitudinal axis such that 0.degree.<.theta..sub.a <.theta..sub.max. The second Bragg grating is associated with the waveguide in such a way that the angular orientation .theta..sub.b of the grating relative to a perpendicular to the longitudinal axis is (360.degree.-.theta..sub.max)<.theta..sub.b <360.degree.. The first Bragg grating can have a periodicity .LAMBDA..sub.a and the second Bragg grating can have a periodicity .LAMBDA..sub.b such that the periodicity .LAMBDA..sub.a of the first Bragg grating does not equal the periodicity .LAMBDA..sub.b of the second Bragg grating. The angle of the gratings can be such that .theta..sub.a =360.degree.-.theta..sub.b. The waveguide can assume a variety of configurations, including an optical fiber, a rectangular waveguide and a planar waveguide. The waveguide can be fabricated of a variety of materials, including silica and polymer material.

Albin, Sacharia↗

A Diamond Electron Tunneling Micro-Electromechanical Sensor

A new pressure sensing device using field emission from diamond coated silicon tips has been developed. A high electric field applied between a nano-tip array and a diaphragm configured as electrodes produces electron emission governed by the Fowler Nordheim equation. The electron emission is very sensitive to the separation between the diaphragm and the tips, which is fixed at an initial spacing and bonded such that a cavity is created between them. Pressure applied to the diaphragm decreases the spacing between the electrodes, thereby increasing the number of electrons emitted. Silicon has been used as a substrate on which arrays of diamond coated sharp tips have been fabricated for electron emission. Also, a diaphragm has been made using wet orientation dependent etching. These two structures were bonded together using epoxy and tested. Current - voltage measurements were made at varying pressures for 1-5 V biasing conditions. The sensitivity was found to be 2.13 mV/V/psi for a 20 x 20 array, which is comparable to that of silicon piezoresistive transducers. Thinner diaphragms as well as alternative methods of bonding are expected to improve the electrical characteristics of the device. This transducer will find applications in many engineering fields for pressure measurement.

Albin, Sacharia↗

Experimental verification of a theoretical model of an active cladding optical fiber fluorosensor

Experiments were conducted to verify a theoretical model on the injection efficiency of sources in the cladding of an optical fiber. The theoretical results predicted an increase in the injection efficiency for higher differences in refractive indices between the core and cladding. The experimental apparatus used consisted of a glass rod 50 cm long, coated at one end with a thin film of fluorescent substance. The fluorescent substance was excited with side illumination, perpendicular to the rod axis, using a 476 nm Argon-ion laser. Part of the excited fluorescence was injected into the core and guided to a detector. The signal was measured for several different cladding refractive indices. The cladding consisted of sugar dissolved in water and the refractive index was changed by varying the sugar concentration in the solution. The results indicate that the power injected into the rod, due to evanescent wave injection, increases with the difference in refractive index which is in qualitative agreement with theory.

Albin, Sacharia↗

Stimulated electronic transition concept for an erasable optical memory

A new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. The properties of MgS:Eu,Sm and SrS:Eu,Sm as possible media for the SET process are investigated. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.

Albin, Sacharia↗

Properties of thin films for high temperature flow sensors

Requirements of material parameters of high temperature flow sensors are identified. Refractory metal silicides offer high temperature sensitivity and high frequency response and are stable up to 1000 C. Intrinsic semiconductors of high band gap are also considered as sensor elements. SiC and diamond are identified. Combined with substrates of low thermal and electrical conductivity, such as quartz or Al2O3, these materials meet several requirements of high sensitivity and frequency response. Film deposition and patterning techniques suitable for these materials are identified.

Albin, Sacharia↗

Thermal diffusivity of diamond films using a laser pulse technique

Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective in-plane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamonds/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film. The average effective diffusivity values are 1.47 + or - 0.03 and 1.83 + or - 0.10 yielding thermal diffusivity values of 7.46 + or - 0.90 and 7.33 + or - 0.70 sq cm/s respectively, for the two samples; the calculated thermal con ductivity values are 13.50 and 13.28 W/cmK, which are better than that of type 1a natural diamond. The phase and amplitude measurements give similar results.

Albin, Sacharia↗

Thermal diffusivity of diamond films

A laser pulse technique to measure the thermal diffusivity of diamond films deposited on a silicon substrate is developed. The effective thermal diffusivity of diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by the laser pulses. An analytical model is developed to calculate the effective in-plane (face-parallel) diffusivity of a two layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film. Phase and amplitude measurements give similar results. The thermal conductivity of the films is found to be better than that of type 1a natural diamond.

Albin, Sacharia↗

Laser damage threshold of diamond films

The possibility that diamond films may inhibit laser-induced damage to optical components in laser systems films was investigated by measuring laser damage thresholds of free-standing diamond film windows, diamond films deposited on silicon substrates, and bare silicon substrate. Polycrystalline diamond films were deposited using a dc plasma-enhanced CVD process. It was found that free-standing diamond films had the highest laser damage threshold at 1064 nm. For a diamond film of 630 nm, the damage threshold was found to be 7 J/sq cm, as compared to a damage threshold of 4.5 J/sq cm for bare silicon, and a low value of 1.5 J/sq cm for the film/substrate combination. The damage mechanism is considered to involve melting or dielectric breakdown induced by laser radiation. The low value of the film/substrate combination is attributed to film stress and conditions of film deposition.

Albin, Sacharia↗

Electrical and optical study of semiconductor laser diodes and materials

The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

Albin, Sacharia↗