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Alexander, P.

Publications and source records attributed to Alexander, P..

12 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

The effects of 8 Helios observed solar proton events of interplanetary magnetic field fluctuations

There have been recent suggestions that large fluxes during solar energetic particle events may produce their own turbulence. To verify this argument it becomes essential to find out whether these flows cause an enhancement of interplanetary magnetic field fluctuations. In the present work, power and helicity spectra of the IMF before, during and after 8 Helios-observed solar proton events in the range 0.3 - 1 AU are analyzed. In order to detect proton self generated waves, the time evolution of spectra are followed.

ValdezGalicia, J. F.↗
NASA NTRS1986

Flat-plate solar array project. Volume 5: Process development

The goal of the Process Development Area, as part of the Flat-Plate Solar Array (FSA) Project, was to develop and demonstrate solar cell fabrication and module assembly process technologies required to meet the cost, lifetime, production capacity, and performance goals of the FSA Project. R&D efforts expended by Government, Industry, and Universities in developing processes capable of meeting the projects goals during volume production conditions are summarized. The cost goals allocated for processing were demonstrated by small volume quantities that were extrapolated by cost analysis to large volume production. To provide proper focus and coverage of the process development effort, four separate technology sections are discussed: surface preparation, junction formation, metallization, and module assembly.

Gallagher, B.↗
NASA NTRS1985

Directed-energy process technology efforts

A summary of directed-energy process technology for solar cells was presented. This technology is defined as directing energy or mass to specific areas on solar cells to produce a desired effect in contrast to exposing a cell to a thermal or mass flow environment. Some of these second generation processing techniques are: ion implantation; microwave-enhanced chemical vapor deposition; rapid thermal processing; and the use of lasers for cutting, assisting in metallization, assisting in deposition, and drive-in of liquid dopants. Advantages of directed energy techniques are: surface heating resulting in the bulk of the cell material being cooler and unchanged; better process control yields; better junction profiles, junction depths, and metal sintering; lower energy consumption during processing and smaller factory space requirements. These advantages should result in higher-efficiency cells at lower costs. The results of the numerous contracted efforts were presented as well as the application potentials of these new technologies.

Alexander, P.↗
NASA NTRS1984

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Culik, J. S.↗
NASA NTRS1984

Backside damage-gettering in cast polycrystalline silicon

The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.

Culik, J.↗
NASA NTRS1984

Emitter formation in dendritic web silicon solar cells

The use of liquid dopants and liquid masks for p-n junction formation in dendritic web solar cells was investigated and found to be equivalent to the use of gaseous dopants and CVD SiO2 masks previously used. This results in a projected cost reduction of 0.02 1980$/Watt for a 25 MW/year production line, and makes possible junction formation processes having a higher throughput than more conventional processes. The effect of a low-energy (0.4 keV) hydrogen ion implant on dendritic web solar cells was also investigated. Such an implant was observed to improve Voc and Jsc substantially. Measurements of internal quantum efficiency suggest that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. The diffusion length for electrons in the p-type base increased from 53 microns to 150 microns in one case, with dendritic web cell efficiency being boosted to 15.2 percent. The mechanism by which low-energy hydrogen ions can penetrate deeply into the silicon to effect the observed improvement is not known at this time.

Meier, D. L.↗
NASA NTRS1980

An all-plated, low cost contact system for silicon solar cells

The plating sequences Pd-Cr-Cu and Pd-Ni-Cu are demonstrated. The surface was sensitized with a 50 A-thick Pd layer obtained from an immersion bath. After 15 min heating at 400 C in N2, a thin barrier layer of either Cr or Ni was deposited from electroless baths operated at temperatures around 90 C. The sintering process was repeated, and a thin copper layer of 500 A was deposited by electroless means. An electrolytic copper bath was used to build the copper layer to 3-4 micron thicknesses. Cells with good I-V curves were obtained, and the all-plated contacts had good adhesion. Preliminary cost estimates show that the process costs approximately 12 cents per watt excluding the cost of the masking procedure.

Tanner, D. P.↗
NASA NTRS1972

A high resolution semiconductor detector for applications in space

Nuclear radiation detectors with volumes of approximately 1 cu cm was fabricated from single crystals of germanium-silicon alloy containing as much as 20 weight percent germanium. The properties of these detectors were investigated and will be discussed. Tests reveal that the gamma ray photoelectric peak efficiency of an alloy detector with only 12 weight percent germanium is approximately 4 times that of a silicon detector of equal volume. The room temperature roomure appears to be a good possibility. Storage for long periods at room temperature does not seem to adversely affect these devices. The results of preliminary radiation damage experiments suggest that the alloy detectors possess a radiation damage resistance far greater than that of silicon.

Alexander, P.↗