Engineering topics
Publications and source records attributed to Amrbar, Mehran.
SEE test results are presented for SDRAM, DDR2, and DDR3. No tested devices exhibited SEL. SBUs were observed, but no MBUs were observed in data words. SEFI data were taken at low and high speed.
Total Ionizing Dose response (ID) of SDRAM (Synchronous Dynamic Random Access Memory), DDR2 (Double Data Rate2) and DDR3 (Double Data Rate3) memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.
We present reliability data combined with total dose gamma radiation for one of the first commercially available resistive memory devices. These Tantalum Oxide (TaOX)-based resistive memory chips demonstrate operation in dynamic program and erase testing up to ~130 Krad(Si) of 60Co gamma dose. In static and unbiased conditions, the stored data in the memory cells were able to withstand up to 50Mrad(Si) of exposure. The access circuitry, though, seemed less robust to gamma radiation and was able to operate only up to a total dose of 3Mrad(Si). Post exposure reliability as indicated by endurance, cycling error rate, and data retention tests showed no detectable impact from the combination with prior gamma irradiation. Overall, the total dose radiation tolerance of the commercial TaOx-based resistive memory chip appears to be higher than flash memory chips and in agreement with prior tests conducted with single cell resistive memories.
SEL, SEU, and TID results are presented for microcontrollers and microprocessors of interest for small satellite systems such as the TI MSP430F1611, MSP430F1612 and MSP430FR5739, Microchip PIC24F256GA110 and dsPIC33FJ256GP710, Atmel AT91SAM9G20, and Intel Atom E620T, and the Qualcomm Snapdragon APQ8064.