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Anand, Shashwat

Publications and source records attributed to Anand, Shashwat.

14 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Origin of enhanced performance when Mn-rich rocksalt cathodes transform to δ -DRX

Most Mn-rich cathodes are known to undergo phase transformation into structures resembling spinel-like ordering upon electrochemical cycling. Recently, the irreversible transformation of Ti-containing Mn-rich disordered rock-salt cathodes into a phase — named δ — with nanoscale spinel-like domains has been shown to increase energy density, capacity retention, and rate capability. However, the nature of the boundaries between domains and their relationship with composition and electrochemistry are not well understood. In this work, we discuss how the transformation into the multi-domain structure results in eight variants of Spinel domains, which is crucial for explaining the nanoscale domain formation in the δ -phase. We study the energetics of crystallographically unique boundaries and the possibility of Li-percolation across them with a fine-tuned CHGNet machine learning interatomic potential. Energetics of 16 d vacancies reveal a strong affinity to segregate to the boundaries, thereby opening Li-pathways at the boundary to enhance long-range Li-percolation in the δ structure. Defect calculations of the relatively low-mobility Ti show how it can influence the extent of Spinel ordering, domain morphology and size significantly; leading to guidelines for engineering electrochemical performance through changes in composition.

Anand, Shashwat↗
DOE OSTI2023

Elucidating Structural Transition Dynamics in the Magnesium Cathode MgCr 2 O 4

Multivalent batteries, e.g., those based on magnesium (Mg), are promising candidates for next-generation energy storage due to their high volumetric energy densities and low cost. However, the corresponding ion migration and structural transition mechanisms are often linked and difficult to observe directly. Here, in this paper, we report the direct investigation of atomic transport pathways of cations in spinel magnesium chromate (MgCr 2 O 4 ) by using aberration-corrected scanning transmission electron microscopy (STEM). Cr atoms are directly observed to reversibly occupy the otherwise vacant octahedrally coordinated interstitial sites, passing through tetrahedral sites normally occupied by Mg. Furthermore, imaging and electron energy loss spectroscopy show that electron irradiation induces the formation of Mg and O vacancies, facilitating the migration of Cr and leading to an irreversible phase transition. These results demonstrate the ability of STEM to capture the pathway of deleterious point defects that can result in undesirable phase transitions.

25 ENERGY STORAGE↗
DOE OSTI2023

Opening the Bandgap of Metallic Half-Heuslers via the Introduction of d–d Orbital Interactions

Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d–d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance. The width of the bandgap can be engineered by tuning the strength of the d–d orbital interactions. The conduction type and the carrier density can also be modulated in the Mg 1- x Ti x NiSb system. Both improved n-type and p-type thermoelectric properties are realized, which are much higher than that of the metallic MgNiSb. The proposed bandgap opening strategy can be employed to design and develop new half-Heusler semiconductors for functional and energy applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Inherent Anharmonicity of Harmonic Solids

Atomic vibrations, in the form of phonons, are foundational in describing the thermal behavior of materials. The possible frequencies of phonons in materials are governed by the complex bonding between atoms, which is physically represented by a spring-mass model that can account for interactions (spring forces) between the atoms (masses). The lowest-order, harmonic , approximation only considers linear forces between atoms and is thought incapable of explaining phenomena like thermal expansion and thermal conductivity, which are attributed to nonlinear, anharmonic , interactions. Here, we show that the kinetic energy of atoms in a solid produces a pressure much like the kinetic energy of atoms in a gas does. This vibrational or phonon pressure naturally increases with temperature, as it does in a gas and therefore results in a thermal expansion. Because thermal expansion thermodynamically defines a Grüneisen parameter γ , which is a typical metric of anharmonicity, we show that even a harmonic solid will necessarily have some anharmonicity. A consequence of this phonon pressure model is a harmonic estimation of the Grüneisen parameter as γ ≈ 3 / 2 3 − 4 x 2 / 1 + 2 x 2 , where x = v t / v l is the ratio of the transverse and longitudinal speeds of sound. We demonstrate the immediate utility of this model by developing a high-throughput harmonic estimate of lattice thermal conductivity that is comparable to other state-of-the-art estimations. By linking harmonic and anharmonic properties explicitly, this study provokes new ideas about the fundamental nature of anharmonicity, while also providing a basis for new material engineering design metrics.

42 ENGINEERING↗
DOE OSTI2022

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors

Abstract Half‐Heusler (hH) compounds are promising candidates for inexpensive, low‐toxicity thermoelectric materials. It is well known that engineering electronic bands with high valley degeneracy is an effective approach for enhancing the performance of thermoelectric materials, and there are several routes for achieving high valley degeneracy in hH systems. For instance, there are multiple locations in the first Brillouin zone where the valence band maximum can be found (at the Γ‐, L‐, or W‐point), and there are two competing low‐lying conduction bands at the X‐point, where the conduction band minimum is located. By converging the multiple valence band and conduction band extrema, the valley degeneracy, and hence, performance of these materials can be improved. Here, group theoretical and tight‐binding approaches, in addition to first‐principles density functional theory calculations, are used to study the chemical origins of various band extrema in both the n‐type and p‐type compounds, with particular focus on ZrNiSn and NbFeSb. Specifically, the importance of avoided crossings is explained. The results of this work can be used to better understand and develop design strategies for engineering better performing hH thermoelectrics.

Brod, Madison K.↗
DOE OSTI2021

Using phase boundary mapping to resolve discrepancies in the Mg 2 Si–Mg 2 Sn miscibility gap

Mg 2 Si–Mg 2 Sn compositions within the Mg–Si–Sn materials system have potential as inexpensive, efficient thermoelectrics. These compositions lie specifically along the pseudobinary line with compositions of Mg 2 Si 1-x Sn x . The alloying and possible nanostructuring within the miscibility gap could further increase the thermoelectric figure of merit (zT) for these materials. However, the solubility limits of the miscibility gap differ greatly in the literature. Such a discrepancy could be a result of differing Mg-compositions due to excess magnesium added during sample annealing. To define these limits better and explain the change in proposed solubility limits based on magnesium content, the three-phase regions on either side of the pseudobinary phase region are phase boundary mapped and defect energy calculations are performed. This study presents a new understanding of the Mg–Si–Sn ternary phase diagram around the pseudobinary phase region. The solubility limits on either side of the pseudobinary should be essentially identical between the Mg-rich and Mg-poor three-phase regions unless the system temperature is brought above about 565 °C, at which eutectic liquid Mg 0.9 Sn 0.1 forms. This creates a second Mg-rich three-phase region which intersects the pseudobinary with a lower Sn solubility. Thus, samples prepared along the pseudobinary line are not well-defined thermodynamically when excess magnesium is added. Excess Mg can push the system into a new three phase region with Mg 2 Si 1-x Sn x composition different from that of the true miscibility gap. This understanding presents new guidelines for evaluating the miscibility gap and assists strategies for microstructure engineering and thermoelectric material processing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Thermoelectric transport of semiconductor full-Heusler VFe 2 Al

Seebeck coefficient of VFe 2 Al over a wide range of doping levels can be explained only with a small band-gap ( E g ) range of 0.02–0.04 eV. This E g value is also consistent with high-temperature resistivity data of nominally stoichiometric VFe 2 Al.

Anand, Shashwat↗
DOE OSTI2020

Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials

Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ - or X -point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ -, L -, or W -point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W -point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Understanding the thermally activated charge transport in NaPb m SbQ m+2 (Q = S, Se, Te) thermoelectrics: weak dielectric screening leads to grain boundary dominated charge carrier scattering

Many thermoelectric materials feature irregular electrical conductivity with thermally activated transport below ~600 K and metallic behavior at high temperatures, despite possessing degenerate carrier concentrations. The suppression of the electrical conductivity ultimately degrades the thermoelectric performance on the cold side and limits the device energy conversion efficiency. As such, establishing the origin of the low temperature scattering and developing strategies to mitigate its effect are paramount issues. To date, the correct microscopic description of the low temperature carrier scattering remains an open issue, and there is little work addressing why some thermoelectric materials are more susceptible to the deleterious behavior. Here, we use the promising thermoelectric alloys of PbQ and NaSbQ 2 (Q = S, Se, Te) as model systems to address these concerns. We directly show the thermally activated transport stems from the scattering of charge carriers by the grain boundaries (GBs), and that the expected metallic electrical conductivity is recovered by preparing large grained samples with reduced densities of GBs. We furthermore study the electrical properties NaPb m SbSe m+2 as a function of NaSbSe 2 fraction, as well as those of the chalcogenide analogues, PbTe–NaSbTe 2 and PbS–NaSbS 2 , and demonstrate that the strength of GB scattering can be understood by utilizing simple chemical principles. By considering the polarizability of the host atoms, we directly relate the magnitude of GB scattering to the relative degree of charge carrier screening in each material, and demonstrate that GB scattering is strongest in the ionic NaSbQ 2 -rich compounds and weakest in more polarizable PbQ-rich phases. We finally show how these chemical arguments elegantly explain the strong GB scattering in numerous other thermoelectric materials. By uniting the deleterious charge transport properties exhibited by many different compounds into a common picture, we discuss how our work gives design principles for proper microstructure engineering in emerging thermoelectric materials.

36 MATERIALS SCIENCE↗