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Anantram, M. P.

Publications and source records attributed to Anantram, M. P..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Two-Dimensional Quantum Model of a Nanotransistor

A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models.

Govindan, T. R.↗
NASA NTRS2003

Conductance Oscillations in Squashed Carbon Nanotubes

A combination of molecular dynamics and electrical conductance calculations are used to probe the electromechanical properties of squashed metallic carbon nanotubes. We find that the conductance and bandgap of armchair nanotubes show oscillations upon squashing. The physical origin of these oscillations is attributed to interaction of carbon atoms with a fourth neighbor. Squashing of armchair and zigzag nanotubes ultimately leads to metallic behavior.

Mehrez, H.↗
NASA NTRS2003

Role of Scattering in Nanotransistors

This viewgraph presentation provides information on scattering and series resistance in nanotransistors with specific characteristics. The presentation includes diagrams of nanotransistor channels, and discusses scattering mechanisms.

Anantram, M. P.↗
NASA NTRS2003

Where is scattering important in nanotransistors?

This viewgraph presentation provides an overview of scattering in nanotransistors. Topics covered include: scattering mechanisms, devices used and series resistance. The authors conclude: (1) the influence of electron-photon scattering on the on-current of dual gate MOSFET's using the non-equilibrium Green's function method and (2) the influence of the drain extension region can no longer be modeled as a series resistance.

Anantram, M. P.↗
NASA NTRS2003

Conductance of Dry DNA: Role of Environment

This paper presents viewgraphs on the conductance of dry DNA and its effect on the surrounding environment. The topics include: 1) Approach; 2) Influence of Counter Ions; 3) Conductance Versus DNA Length; 4) Intrinsic Resonant Tunneling in Engineered DNA Sequence; and 5) Transmission Versus Energy.

Anantram, M. P.↗
NASA NTRS2003

Influence of Disorder on DNA Conductance

Disorder along a DNA strand due to non uniformity associated with the counter ion type and location, and in rise and twist are investigated using density functional theory. We then model the conductance through a poly(G) DNA strand by including the influence of disorder. We show that the conductance drops by a few orders of magnitude between typical lengths of 10 and 100 nm. Such a decrease occurs with on-site potential disorder that is larger than 100 meV.

Adessi, Christophe↗
NASA NTRS2003

The Conductance of Nanotubes Deformed by the AFM Tip

The conductance drop under AFM-tip deformation can be explained by stretching of the tube length. NT sensors can be built utilizing uniform stretching. Single sp3 bond cross section cannot block electrons, because another conducting path may exist. AFM tip which forms sp3 bonds with the tube will decrease conductance. In the "table experiment" a conductance drop of 2 orders of magnitude happened only after some bonds were broken.

Svizhenko, Alexei↗
NASA NTRS2002

Where is Scattering Important in Nanotransistors?

This viewgraph presentation provides information on where scattering is most detrimental to on-current in a transistor nanostructure. It also provides information on series resistance, potential, and current. The presentation includes algorithms and models for two dimensional (quasi-one dimensional) simulation of nanostructures, and equations for retarded and less-than Green's functions.

Anantram, M. P.↗
NASA NTRS2002

Environment and Structure Influence in DNA Conduction

Results for transmission through the poly(G) DNA molecule are presented. We show that (i) periodically arranged sodium counter-ions in close proximity to dry DNA gives rise to a new conduction channel and aperiodicity in the counter-ion sequence can lead to a significant reduction in conduction, (ii) modification of the rise of B-DNA induces a change in the width of the transmission window, and (iii) specifically designed sequences are predicted to show intrinsic resonant tunneling behavior.

Adessi, C.↗
NASA NTRS2002

Influence of Scattering on Ballistic Nanotransistor Design

Importance of this work: (1) This is the first work to model electron-phonon scattering within a quantum mechanical approach to nanotransistors. The simulations use the non equilibrium Green's function method. (2) A simple equation which captures the importance of scattering as a function of the spatial location from source to drain is presented. This equation helps interpret the numerical simulations. (3) We show that the resistance per unit length in the source side is much larger than in the drain side. Thus making scattering in the source side of the device much more important than scattering in the drain side. Numerical estimates of ballisticity for 10nm channel length devices in the presence of of electron-phonon scattering are given. Based on these calculations, we propose that to achieve a larger on-current in nanotransistors, it is crucial to keep the highly doped source extension region extremely small, even if this is at the cost of making the highly doped drain extension region longer.

Anantram, M. P.↗
NASA NTRS2002

Effects of Structural Deformation and Tube Chirality on Electronic Conductance of Carbon Nanotubes

A combination of large scale classical force-field (UFF), density functional theory (DFT), and tight-binding Green's function transport calculations is used to study the electronic properties of carbon nanotubes under the twist, bending, and atomic force microscope (AFM)-tip deformation. We found that in agreement with experiment a significant change in electronic conductance can be induced by AFM-tip deformation of metallic zigzag tubes and by twist deformation of armchair tubes. The effect is explained in terms of bandstructure change under deformation.

Svizhenko, Alexei↗
NASA NTRS2002

Engineering DNA Conductance

This poster presentation details the small-scale engineering production of DNA based molecular devices, the theoretical feasibility of which is being assessed.

Addesi, C.↗
NASA NTRS2002

Structure and Environment Influence in DNA Conduction

Results for transmission through a poly(G) DNA molecule are presented. We show that a modification of the rise of a B-DNA form can induce a shift of the conduction channel toward the valence one. We clearly prove that deformation of the backbone of the molecule has a significant influence on hole transport. Finally, we observe that the presence of ionic species, such Na, near the molecule can create new conduction channels.

Adessi, C.↗
NASA NTRS2001

Which nanowire couples better electrically to a metal contact: Armchair or zigzag nanotube?

The fundamental question of how chirality affects tile electronic coupling of a nanotube to metal contacts is important for tile application of nanotubes as nanowires. We show that metallic-zigzag nanotubes are superior to armchair nanotubes as nanowires, by modeling the metal-nanotube interface. More specifically, we show that as a function of coupling strength, the total electron transmission of armchair nanotubes increases and tends to be pinned close to unity for a metal with Fermi wave vector close to that of gold. In contrast, the transmission probability of zigzag nanotubes increases to the maximum possible value of two. The origin of these effects lies in the details of the wave function, which is explained.

Anantram, M. P.↗
NASA NTRS2001

Resonant Versus Anti-Resonant Tunneling at Carbon Nanotube A-B-A Heterostructures

Narrow antiresonances going to zero transmission are found to occur for general (2n,0)(n,n)(2n,0) carbon nanotube heterostructures, whereas the complementary configuration, (n,n)(2n,0)(n,n), displays simple resonant tunneling behaviour. We compute examples for different cases, and give a simple explanation for the appearance of antiresonances in one case but not in the other. Conditions and ranges for the occurrence of these different behaviors are stated. The phenomenon of anti-resonant tunneling, which has passed unnoticed in previous studies of nanotube heterostructures, adds up to the rich set of behaviors available to nanotube based quantum effect devices.

Mingo, N.↗
NASA NTRS2001

Transport Through Carbon Nanotube Wires

This viewgraph presentation deals with the use of carbon nanotubes as a transport system. Contact, defects, tubular bend, phonons, and mechanical deformations all contribute to reflection within the nanotube wire. Bragg reflection, however, is native to an ideal energy transport system. Transmission resistance depends primarily on the level of energy present. Finally, the details regarding coupling between carbon nanotubes and simple metals are presented.

Anantram, M. P.↗