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Anderson, W. A.

Publications and source records attributed to Anderson, W. A..

Photoreflectance and DLTS evaluation of plasma-induced damage in GaAs and InP prior to solar cell fabrication

The effect is considered of plasma etching on both GaAs and InP followed by damage removal using rapid thermal annealing (RTA). Effects of these processes were studied by photoreflectance spectroscopy (PR) and deep level transient spectroscopy (DLTS). These techniques are useful in evaluation of wafers prior to and effects of plasma processing during solar cell fabrication.

He, L.

Deep levels and radiation effects in p-InP

A survey was conducted on past studies of hole traps in InP. An experiment was designed to evaluate hole traps in Zn-doped InP after fabrication, after electron irradiation and after annealing using deep level transient spectroscopy. Data similar to that of Yamaguchi was seen with observation of both radiation-induced hole and electron traps at E sub A=0.45 eV and 0.03 eV, respectively. Both traps are altered by annealing. It is also shown that trap parameters for surface-barrier devices are influenced by many factors such as bias voltage, which probes traps at different depths below the surface. These devices require great care in data evaluation.

Anderson, W. A.

I-V-T analysis of radiation damage in high efficiency Si solar cells

A detailed analysis of current-voltage characteristics of N(+)-P/P solar cells indicate that there is a combination of different mechanisms which results in an enhancement in the dark current and in turn deteriorates the photovoltaic performance of the solar cells after 1 MeV e(-) irradiation. The increase in the dark current is due to three effects, i.e., bulk recombination, space charge recombination by deep traps and space charge recombination through shallow traps. It is shown that the increase in bulk recombination current is about 2 to 3 orders of magnitude whereas space charge recombination current due to shallow traps increases only by an order or so and no space charge recombination through deep traps was observed after irradiation. Thus, in order to improve the radiation hardness of these devices, bulk properties should be preserved.

Banerjee, S.

Influence of design variables on radiation hardness of silicon MINP solar cells

Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

Anderson, W. A.

Silicon Schottky photovoltaic diodes for solar energy conversion

Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

Anderson, W. A.

Space shuttle booster multi-engine base flow analysis

A comprehensive review of currently available techniques pertinent to several prominent aspects of the base thermal problem of the space shuttle booster is given along with a brief review of experimental results. A tractable engineering analysis, capable of predicting the power-on base pressure, base heating, and other base thermal environmental conditions, such as base gas temperature, is presented and used for an analysis of various space shuttle booster configurations. The analysis consists of a rational combination of theoretical treatments of the prominent flow interaction phenomena in the base region. These theories consider jet mixing, plume flow, axisymmetric flow effects, base injection, recirculating flow dynamics, and various modes of heat transfer. Such effects as initial boundary layer expansion at the nozzle lip, reattachment, recompression, choked vent flow, and nonisoenergetic mixing processes are included in the analysis. A unified method was developed and programmed to numerically obtain compatible solutions for the various flow field components in both flight and ground test conditions. Preliminary prediction for a 12-engine space shuttle booster base thermal environment was obtained for a typical trajectory history. Theoretical predictions were also obtained for some clustered-engine experimental conditions. Results indicate good agreement between the data and theoretical predicitons.

Tang, H. H.