Engineering topics
Publications and source records attributed to Anspaugh, B..
AM0 solar cell calibration laboratories throughout the world are working together to create standard methods for AM0 calibration. In an effort to compare the results of different calibration methods, five different laboratories calibrated GaAs and Si solar cells. The results of this inter-comparison are presented herein.
Maximum power output for the GaP cells of this study was found to be on the order of 1 microW. This resulted from exposure to 200 and 40 KeV electrons at a flux of 2 x 10(exp 9) electrons/sq cm/s, equivalent to a 54 mCurie source. The efficiencies of the cells ranged from 5 to 9 percent for 200 and 40 KeV electrons respectively. The lower efficiency at higher energy is due to a substantial fraction of energy deposition in the substrate, further than a diffusion length from the depletion region of the cell. Radiation damage was clearly observed in GaP after exposure to 200 KeV electrons at a fluence of 2 x 10(exp 12) electrons/sq cm. No discernable damage was observed after exposure to 40 KeV electrons at the same fluence. Analysis indicates that a GaP betavoltaic system would not be practical if limited to low energy beta sources. The power available would be too low even in the ideal case. By utilizing high activity beta sources, such as Sr-90/Y-90, it may be possible to achieve performance that could be suitable for some space power applications. However, to utilize such a source the problem of radiation damage in the beta cell material must be overcome.
Results of a series of low-energy proton (LEP) tests are presented. The purpose of the tests was to investigate the effect of low-energy protons on the electrical performance of solar cells with simulated cracked covers. The results of the tests were then related to the space environment. A matrix of LEP tests was set up using solar cells with simulated cracks to determine the effect on electrical performance as a function of fluence, energy, crack width, coverglass adhesive shielding, crack location, and solar cell size. The results of the test were, for the most part, logical, and consistent.
Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.
High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.
This paper reviews the various GaAs solar cell programs that have been and are now ongoing which are directed at bringing this particular technology to fruition. The discussion emphasizes space application - both concentrator and flat plate. The rationale for pursuing GaAs cell technology is given along with the different cell types (concentrator, flat plate), approaches to fabricate the devices, the hybrid cells under investigation and approaches to reduce cell mass are summarized. The outlook for the use of GaAs cell technology is given within the context for space application.
Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.
Several types of solar cell/coverslide combinations were launched into synchronous orbit. The cells were 2 and 10 ohm-cm crucible-grown silicon with thicknesses of 0.2 and 0.3 mm. Coverslides were fused silica, ranging in thickness from 0.15 to 1.52 mm. The cells were mounted on two panels, one a rigid aluminum honeycomb structure, giving essentially infinite backshielding; the other was a thin Kapton-fiberglass substrate, offering minimal protection to the rear surface of the cells. The current-voltage curves of the cells were measured. Correction of cell electrical output to standard temperature and solar intensity was performed, using empirical radiation-dependent corrections. It is found that the cells on the flexible panel degrade much more rapidly than predicted, while the rigid panel cells follow the predictions fairly well. The anomalous behavior of the flexible panel cells is attributed to the deposition of a contaminant on the cell coverslides.
Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.
The problem of calculating solar panel power output at launch and during a space mission is considered. The major sources of uncertainty and error in predicting the post launch electrical performance of the panel are considered. A general discussion of error analysis is given. Examples of uncertainty calculations are included. A general method of calculating the effect on the panel of various degrading environments is presented, with references supplied for specific methods. A technique for sizing a solar panel for a required mission power profile is developed.
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