Engineering topics

Anspaugh, Bruce

Publications and source records attributed to Anspaugh, Bruce.

5 records

NASA NTRS1991

Radiation performance of GaAs concentrator cells for 0.4 to 12 MeV electrons and 0.1 to 37 MeV protons

Gallium arsenide concentrator cells have been irradiated with both electrons and protons with a wide variety of energies. The cells are made using OM-VPE growth process with a junction depth of a half micron. All data are taken with bare cells without coverglasses or shielding. Performance data are given at the designed concentration level of 100X AMO. Results are presented in a number of ways, including performance of electrical parameters (Pmax, Isc, and Voc) as a function of fluence for different electron and proton energies. Critical fluences (defined at a degradation of 25 percent in Pmax) are calculated for each energy level and presented for both electron and proton irradiations.

Curtis, Henry B.↗

NASA NTRS1990

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Michael, Sherif↗

NASA NTRS1988

Photon degradation of AlGaAs/GaAs solar cells

The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 28 C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.

Anspaugh, Bruce↗

NASA NTRS1987

A verified technique for calibrating space solar cells

Solar cells have been flown on high-altitude balloons for over 24 years, to produce solar cell standards that can be used to set the intensity of solar simulators. The events of a typical balloon calibration flight are reported. These are: the preflight events, including the preflight cell measurements and the assembly of the flight cells onto the solar tracker; the activities at the National Scientific Balloon Facility in Palestine, Texas, including the preflight calibrations, the mating of the tracker and cells onto the balloon, preparations for launch, and the launch; the payload recovery, which includes tracking the balloon by aircraft, terminating the flight, and retrieving the payload. In 1985, the cells flow on the balloon were also flown on a shuttle flight and measured independently. The two measurement methods are compared and shown to agree within 1 percent.

Anspaugh, Bruce↗

NASA NTRS1987

Effect of front and rear incident proton irradiation on silicon solar cells

Four solar cell types of current manufacture were irradiated through the front and rear surfaces with protons in the energy range between 1 and 10 MeV. The solar cell parameters varied for this study were cell thickness and back surface field (BSF) vs. no BSF. Some cells were irradiated at normal incidence and an equal number were irradiated with simulated isotropic fluences. The solar cell electrical characteristics were measured under simulated AM0 illumination after each fluence. Using the normal incidence data, proton damage coefficients were computed for all four types of cells for both normal and omnidirectional radiation fields. These were found to compare well with the omnidirectional damage coefficients derived directly from the rear-incidence radiation data. Similarly, the rear-incidence omnidirectional radiation data were used to compute appropriate damage coefficients. A method for calculating the effect of a spectrum of energies is derived from these calculations. It is suitable for calculating the degradation of cells in space when they have minimal rear-surface shielding.

Anspaugh, Bruce↗