Aran, Emily K. | Search NASA

DOE OSTI2024

System and method for bending crystal wafers for use in high resolution analyzers

The invention provides a method for fabricating analyzers, the method comprising providing a radiation manipulating material on a first surface of a flexible support; contacting a second surface of the flexible support to a permeable mold, wherein the mold has a first flexible support contact surface and a second surface; and applying negative pressure to the second side of the flexible support to cause the flexible support to conform to the first flexible support contact surface of the mold. Also provided is a system for fabricating crystal analyzers, the system comprising crystal structures reversibly attached to a flexible support; a porous mold reversibly contacting the flexible support, wherein the mold defines a topography; and a negative pressure applied to the flexible support to cause the crystal structures to conform to the topography.

Said, Ayman H.↗

DOE OSTI2022

Novel fabrication technique for high-resolution spherical crystal analyzers using a microporous aluminium base

Modern inelastic X-ray spectrometers employ curved, bent and diced analyzers to capture sufficiently large solid angles of radially emitted scattered radiation emanating from the sample. Fabricating these intricate analyzers, especially when a high energy resolution of a few millielectronvolts is required, is very time-consuming, expensive and often a hit-or-miss affair. A novel fabrication technique is introduced, utilizing a concave-spherical, microporous aluminium base to hold an assembly of a thin glass substrate with a diced crystal wafer bonded to it. Under uniform vacuum forces, the glass substrate is drawn into the aluminium base, achieving the desired bending radius, while dicing of the diffracting crystal layer prevents bending strain from being imposed on the individual crystal pixels. This technique eliminates the need for permanently bonding the crystal assembly to the concave lens, offering the opportunity for correcting figure errors, avoiding long-term degradation of the permanent bond, and making both lens and crystal reusable. Process and material costs are thus substantially decreased. Two analyzers, Si(844) and Ge(337) with intrinsic resolutions of 14.6 meV and 36.5 meV, respectively, were produced in this fashion and characterized in resonant inelastic X-ray scattering (RIXS) measurements. The achieved overall energy resolutions for both analyzers were 29.4 meV for Si(844) and 56.6 meV for Ge(337). Although the RIXS technique is veru sensitive to analyzer imperfections, the analyzers were found to be equal, if not superior, in quality to their traditional, permanently bonded counterparts.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗