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Ardavan, Arzhang

Publications and source records attributed to Ardavan, Arzhang.

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Feed network and electromagnetic radiation source

An antenna may include a volume polarization current radiator and a feed network. The volume polarization current radiator, includes a dielectric solid (such as a dielectric strip), and a plurality of closely-spaced excitation elements (24), each excitation element (24) being configured to induce a volume polarization current distribution in the dielectric solid proximate to the excitation element when a voltage is applied to the excitation element. The feed network is coupled to the volume polarization current radiator. The feed network also includes a plurality of passive power divider elements (32) and a plurality of passive delay elements (d1-d6) coupling the first port (30) and the plurality of second ports (108, 109, 164), the plurality of power divider elements (32) and the plurality of phase delay elements (d1-d6) being configured such that a radio-frequency signal that is applied to the first port (30) experiences a progressive change of phase as it is coupled to the plurality of second ports (108, 109, 164) so as to cause the volume polarization current distribution to propagate along the dielectric solid.

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

Antiferromagnetism in a Family of S = 1 Square Lattice Coordination Polymers NiX 2 (pyz) 2 (X = Cl, Br, I, NCS; pyz = Pyrazine)

The crystal structures of NiX2(pyz)(2) (X = Cl (1), Br (2), I (3), and NCS (4)) were determined by synchrotron X-ray powder diffraction. All four compounds consist of two-dimensional (2D) square arrays self-assembled from octahedral NiN4X2 units that are bridged by pyz ligands. The 2D layered motifs displayed by 1-4 are relevant to bifluoride-bridged [Ni(HF2) (pyz)(2)]EF6 (E = P, Sb), which also possess the same 2D layers. In contrast, terminal X ligands occupy axial positions in 1-4 and cause a staggered packing of adjacent layers. Long-range antiferromagnetic (AFM) order occurs below 1.5 (Cl), 1.9 (Br and NCS), and 2.5 K (I) as determined by heat capacity and muon-spin relaxation. The single-ion anisotropy and g factor of 2, 3, and 4 were measured by electron-spin resonance with no evidence for zero field splitting (ZFS) being observed. The magnetism of 1-4 spans the spectrum from quasi-two-dimensional (2D) to three-dimensional (3D) antiferromagnetism. Nearly identical results and thermodynamic features were obtained for 2 and 4 as shown by pulsed-field magnetization, magnetic susceptibility, as well as their Neel temperatures. Magnetization curves for 2 and 4 calculated by quantum Monte Carlo simulation also show excellent agreement with the pulsed-field data. Compound 3 is characterized as a 3D AFM with the interlayer interaction (j(perpendicular to)) being slightly stronger than the intralayer interaction along Ni-pyz-Ni segments (j(pyz)) within the two-dimensional [Ni(pyz)(2)](2+) square planes. Regardless of X, j(pyz), is similar for the four compounds and is roughly 1 K.

Liu, Junjie↗
DOE OSTI2015

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1 V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗