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Ast, D.

Publications and source records attributed to Ast, D..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

An EBIC study of HEM polycrystalline silicon

Low-cost silicon for solar cells grown by the heat exchanger method (HEM) was studied in the electron beam induced current (EBIC) mode of a scanning electron microscope (SEM). Comparisons were made between the defects observed optically and the recombination centers visible in EBIC. Much of the HEM material was single crystalline, but structural defects were found from areas near the corners of the grown material. Most of these defects consisted of linear twin boundaries and grain boundaries. The electrical activity of these boundaries was dependent on symmetry of the boundaries. Symmetric twin boundaries did not exhibit recombination activity while unsymmetric twin boundaries were electrically active.

Koch, T.↗
NASA NTRS1982

An EBIC study of dislocation networks in unprocessed and unprocessed web silicon ribbon

Experimental techniques for the preparation of electron beam induced current samples of Web-dentritic silicon are described. Both as grown and processed material were investigated. High density dislocation networks were found close to twin planes in the bulk of the material. The electrical activity of these networks is reduced in processed material.

Fieldler, F. S.↗
NASA NTRS1981

EBIC and HVTEM studies of RTR silicon ribbon

The defect structure of RTR ribbon #6-731, run 803 was studied. Prior to laser recrystallization the defect structure consists of closely spaced twin and grain boundaries. Precipitation of impurities occurs after laser recrystallization. The observation of electrically active defects in EBIC was correlated with HVTEM studies. Pairs of electrically active defects in twin boundaries are due to stacking faults connecting the twin boundaries.

Cunningham, B.↗
NASA NTRS1980

Defect structure of EFG silicon ribbon

The defect structure of EFG ribbons was studied using EBIC, TEM and HVEM. By imaging the same areas in EBIC and HVEM, a direct correlation between the crystallographic nature of defects and their electrical properties was obtained. (1) Partial dislocations at coherent twin boundaries may or may not be electrically active. Since no microprecipitates were observed at these dislocations it is likely that the different electrical activity is a consequence of the different dislocation core structures. (2) 2nd order twin joins were observed which followed the same direction as the coherent first order twins normally associated with EFG ribbons. These 2nd order twin joins are in all cases strongly electrically active. EFG ribbons contain high concentrations of carbon. Since no evidence of precipitation was found with TEM it is suggested that the carbon may be incorporated into the higher order twin boundaries now known to exist in EFG ribbons.

Strunk, H.↗
NASA NTRS1980

Defect structure of web silicon ribbon

The results of a preliminary study of two dendritic web samples are presented. The structure and electrical activity of the defects in the silicon webs were studied. Optical microscopy of chemically etched specimens was used to determine dislocation densities. Samples were mechanically polished, then Secco etched for approximately 5 minutes. High voltage transmission electron microscopy was used to characterize the crystallographic nature of the defects.

Cunningham, B.↗