Engineering topics

Avery, J. E.

Publications and source records attributed to Avery, J. E..

9 records

NASA NTRS2002

34% Efficient InGaP/GaAs/GaSb Cell-Interconnected-Circuits for Line-Focus Concentrator Arrays

While monolithic multi-junction cells are preferred for flat plate arrays, mechanically stacked multi-junction cells are superior for solar concentrator applications. Reasons for this are that the mechanical stacked configuration with high efficiency Gallium Antimonide cells allows utilization of a much wider range of the solar energy spectrum, and the ability to use voltage matched interconnects results in full use of low bandgap cell currents. Herein, data are presented for simple two terminal voltage-matched circuits using InGaP/GaAs/GaSb stacked cells showing 34% average circuit efficiency for a lot of 12 circuits given prismatic covers. These circuits have been designed to fit into the ultralight Stretched Lens Array being developed by NASA. With these new cell-interconnected-circuits, we project that the power density at GEO operating temperature can be increased from 296 W/m2 to 350 W/m2 while maintaining the specific power at 190 W/kg at the full wing level.

Fraas, L. M.↗

NASA NTRS1992

Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules

In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

Fraas, L. M.↗

NASA NTRS1991

The effects of electron and proton radiation on GaSb infrared solar cells

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

Gruenbaum, P. E.↗

NASA NTRS1991

Tandem concentrator solar cells with 30 percent (AMO) power conversion efficiency

Very high efficiency concentrator solar panels are envisioned as economical and reliable electrical power subsystems for space based platforms of the future. GaAs concentrator cells with very high efficiencies and good sub-bandgap transmissions can be fabricated on standard wafers. GaSb booster cell development is progressing very well; performance characteristics are still improving dramatically. Consistent GaAs/GaSb stacked cell AMO efficiencies greater than 30 percent are expected.

Avery, J. E.↗

NASA NTRS1991

A high-performance photovoltaic concentrator array - The mini-dome Fresnel lens concentrator with 30 percent efficient GaAs/GaSb tandem cells

A high-efficiency, lightweight space photovoltaic concentrator array is described. Previous work on the minidome Fresnel lens concentrator concept is being integrated with Boeing's 30 percent efficient tandem GaAs/GaSb concentrator cells into a high-performance photovoltaic array. Calculations indicate that, in the near term, such an array can achieve 300 W/sq m at a specific power of 100 W/kg. Emphasis of the program has now shifted to integrating the concentrator lens, tandem cell, and supporting panel structure into a space-qualifiable array. A description is presented of the current status of component and prototype panel testing and the development of a flight panel for the Photovoltaic Array Space Power Plus Diagnostics (PASP PLUS) flight experiment.

Piszczor, M. F.↗

NASA NTRS1990

Lightweight concentrator module with 30 percent AM0 efficient GaAs/GaSb tandem cells

A concept is presented for an aerospace concentrator module with lightweight domed lenses and 30 percent AM0 efficient GaAs/GaSb tandem solar cell circuits. The performance of transparent GaAs cells is reviewed. NASA's high-altitude jet flight calibration data for recent GaSb cells assembled with bulk GaAs filters are reported, along with subsequent Boeing and NASA measurements of GaSb I-V performance at various light levels and temperatures. The expected performance of a basic two-terminal tandem concentrator circuit with three-to-one voltage matching is discussed. All of the necessary components being developed to assemble complete flight test coupons are shown. Straightforward interconnect and assembly techniques yield voltage matched circuits with near-optimum performance over a wide temperature range.

Avery, J. E.↗

NASA NTRS1976

A program continuation to develop processing procedures for advanced silicon solar cells

Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.

Avery, J. E.↗

NASA NTRS1975

Development of processing procedures for advanced silicon solar cells

Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

Scott-Monck, J. A.↗

NASA NTRS1972

Design and fabrication of wraparound contact silicon solar cells

Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process.

Scott-Monck, J. A.↗