Engineering topics

Bae, Seokjin

Publications and source records attributed to Bae, Seokjin.

3 records

DOE OSTI2023

Physical Behavior of Quantum Metamaterials (Final Report)

We are on the cusp of creating artificial quantum matter through engineered structures that mimic natural atoms and create new electronic and electromagnetic behavior not observed in nature. My objective is to explore new quantum states of matter through creation of engineered quantum meta-atoms and their arrangement into structures that create qualitatively new types of quantum coherent behavior, especially in terms of their interaction with electromagnetic fields. The technical approach involves assembly of superconducting quantum devices that are nominally identical and strongly interacting with each other, and with a bath of microwave photons, and measuring their emergent behavior through their electromagnetic response. The results will give fundamental insights into the nature of condensed matter and specific outcomes include investigation of proposed but un-realized states of matter, emergent quantum phenomena, and controlled super-radiant behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2019

Microwave Meissner screening properties of proximity-coupled topological-insulator / superconductor bilayers

The proximity-coupled topological-insulator / superconductor (TI/SC) bilayer system is a representative system to realize topological superconductivity. In order to better understand this unique state and enable future applications of the TI/SC bilayer, a comprehensive characterization and understanding of the microscopic properties of the bilayer are required. In this work, a microwave Meissner screening study, which exploits a high-precision microwave resonator technique, is conducted on the SmB 6 /YB 6 thin-film bilayers as an example TI/SC system. The study reveals spatially dependent electrodynamic screening response of the TI/SC system that is not accessible to other techniques, from which the corresponding microscopic properties of a TI/SC bilayer can be obtained. The TI thickness dependence of the effective penetration depth suggests the existence of a bulk insulating region in the TI layer. The spatially dependent electrodynamic screening model analysis provides an estimate for the characteristic lengths of the TI/SC bilayer: normal penetration depth, normal coherence length, and the thickness of the surface states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2019

Point-node gap structure of the spin-triplet superconductor UTe 2

In this work, low-temperature electrical and thermal transport, magnetic penetration depth, and heat capacity measurements were performed on single crystals of the actinide superconductor UTe 2 to determine the structure of the superconducting energy gap. Heat transport measurements performed with currents directed along both crystallographic a and b axes reveal a vanishingly small residual fermionic component of the thermal conductivity. The magnetic field dependence of the residual term follows a rapid, quasilinear increase consistent with the presence of nodal quasiparticles, rising toward the a -axis upper critical field where the Wiedemann-Franz law is recovered. Together with a quadratic temperature dependence of the magnetic penetration depth up to T / T c = 0.3 , these measurements provide evidence for an unconventional spin-triplet superconducting order parameter with point nodes. Millikelvin specific heat measurements performed on the same crystals used for thermal transport reveal an upturn below 300 mK that is well described by a divergent quantum-critical contribution to the density of states (DOS). Modeling this contribution with a T - 1 / 3 power law allows restoration of the full entropy balance in the superconducting state and a resultant cubic power law for the electronic DOS below T c , consistent with the point-node gap structure determined by thermal conductivity and penetration depth measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗