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Bahri, M.

Publications and source records attributed to Bahri, M..

Fuel cells, batteries and super-capacitors stand-alone power systems management using optimal/flatness based-control

In this work, an optimal control (under constraints) based on the Pontryagin’s maximum principle is used to optimally manage energy flows in a basic PEM (Proton Exchange Membrane) fuel cells system associated to lithium-ion batteries and supercapacitors through a common DC bus having a voltage to stabilize using the differential flatness approach. The adaptation of voltage levels between different sources and load is ensured by use of three DC-DC converters, one boost connected to the PEM fuel cells, while the two others are buck/boost and connected to the lithiumion batteries and supercapacitors. The aim of this paper is to develop an energy management strategy that is able to satisfy the following objectives: Impose the power requested by a habitat (representing the load) according to a proposed daily consumption profile, Keep fuel cells working at optimal power delivery conditions, Maintain constant voltage across the common DC bus, Stabilize the batteries voltage and stored quantity of charge at desired values given by the optimal control. Results obtained under MATLAB/Simulink environment prove that the cited objectives are satisfied, validating then, effectiveness and complementarity between the optimal and flatness concepts proposed for energy management. Note that this study is currently in experimentally validation within MSE Laboratory.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Abrupt GaP/Si hetero-interface using bistepped Si buffer

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗