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Bai, J.

Publications and source records attributed to Bai, J..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

A multiwavelength analysis of a collection of short-duration GRBs observed between 2012 and 2015

We explore the prompt emission and the afterglow properties of short-duration gamma-ray burst (sGRB) 130603B and another eight sGRB events during 2012-2015, observed by several multiwavelength facilities including the Gran Canarias Telescope 10.4 m telescope. Prompt emission high energy data of the events were obtained by INTEGRAL-SPI-ACS, Swift-BAT, and Fermi-GBM satellites. The prompt emission data by INTEGRAL in the energy range of 0.1-10 MeV for sGRB 130603B, sGRB 140606A, sGRB 140930B, sGRB 141212A, and sGRB 151228A do not show any signature of the extended emission or precursor activity and their spectral and temporal properties are similar to those seen in case of other short bursts. For sGRB 130603B, our new afterglow photometric data constrain the pre-jet-break temporal decay due to denser temporal coverage. For sGRB 130603B, the afterglow light curve, containing both our new and previously published photometric data is broadly consistent with the ISM afterglow model. Modeling of the host galaxies of sGRB 130603B and sGRB 141212A using the LePHARE software confirms a scenario in which the environment of the burst is undergoing moderate star formation activity. From the inclusion of our late-time data for eight other sGRBs we are able to: place tight constraints on the non-detection of the afterglow, host galaxy, or any underlying 'kilonova' emission. Our late-time afterglow observations of the sGRB 170817A/GW170817 are also reported on and compared with the sub-set of sGRBs.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2018

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO 3 films

The nature of the metal-insulator transition in thin films and superlattices of LaNiO 3 only a few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties of ultrathin films. Here we report results obtained for near-ideal LaNiO 3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO 3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO 2 termination). Electronic structure measurements using X-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal-insulator transition.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Tensile deformation mechanisms of an in-situ Ti-based metallic glass matrix composite at cryogenic temperature

Remarkable tensile ductility was first obtained in an in-situ Ti-based bulk metallic glass (BMG) composite at cryogenic temperature (77 K). The novel cryogenic tensile plasticity is related to the effective accommodation of ductile body-centered cubic dendrites at 77 K, characteristic of the prevailing slip bands and dislocations, as well as lattice disorder, which can effectively hinder the propagation of critical shear bands. The greatly increased yield strength of dendrites contributes to the high yield strength of composite at 77 K. A trend of stronger softening is observed at low temperature, and a criterion is proposed to understand the softening behavior. In conclusion, the current research could also provide a guidance to the promising cryogenic application of these new advanced BMG composites.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2} mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Enhanced non-radiative energy transfer in hybrid III-nitride structures

The effect of surface states has been investigated in hybrid organic/inorganic white light emitting structures that employ high efficiency, nearfield non-radiative energy transfer (NRET) coupling. The structures utilize blue emitting InGaN/GaN multiple quantum well (MQW) nanorod arrays to minimize the separation with a yellow emitting F8BT coating. Surface states due to the exposed III-nitride surfaces of the nanostructures are found to reduce the NRET coupling rate. The surface states are passivated by deposition of a silicon nitride layer on the III-nitride nanorod surface leading to reduced surface recombination. A low thickness surface passivation is shown to increase the NRET coupling rate by 4 times compared to an un-passivated hybrid structure. A model is proposed to explain the increased NRET rate for the passivated hybrid structures based on the reduction in surface electron depletion of the passivated InGaN/GaN MQW nanorods surfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1−x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup ¯}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films

Hybrid organic/inorganic white light emitting structures have been fabricated based on a combination of high efficiency InGaN/GaN multiple quantum well (MQW) nanorod arrays and a yellow emitting co-polymer F8BT, leading to a minimised separation between them in order to achieve high efficiency non-radiative energy transfer (NRET). The NRET efficiency has been found 6.7 times higher at room temperature than at 7 K. This is attributed to the existence of strong exciton localization the InGaN MQWs, which can undergo thermally activated delocalization at high temperatures. The enhanced NRET efficiency is not only due to the delocalized MQW excitons, but also enhanced by the increased exciton diffusion at higher temperatures. This behaviour highlights the potential for high efficiency NRET in down-conversion hybrid white light emitting diodes operating at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗