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Bailey, G. C.

Publications and source records attributed to Bailey, G. C..

Infrared Linear Imaging Array

Photodiodes, multiplexer, and preamp reside in hybrid ceramic package. Hybrid microcircuit produces 128-element line images of infrared scenes. Each picture element is 0.008-in. (0.2-mm) square. Even without image data processing, microcircuit resolves temperature differences as small as 0.05 degrees C in infrared images.

Bailey, G. C.

Integrating IR detector imaging systems

An integrating IR detector array for imaging is provided in a hybrid circuit with InSb mesa diodes in a linear array, a single J-FET preamplifier for readout, and a silicon integrated circuit multiplexer. Thin film conductors in a fan out pattern deposited on an Al2O3 substrate connect the diodes to the multiplexer, and thick film conductors also connect the reset switch and preamplifier to the multiplexer. Two phase clock pulses are applied with a logic return signal to the multiplexer through triax comprised of three thin film conductors deposited between layers. A lens focuses a scanned image onto the diode array for horizontal read out while a scanning mirror provides vertical scan.

Bailey, G. C.

Astronomical camera using a high-performance indium antimonide linear array

The development and current status of InSb line arrays for astronomy are reviewed. Instrument concepts are currently being developed for an infrared instrument for NASA's Space Telescope which would use such detectors for both spectroscopy and imaging. Preliminary performance measurements are given for a simple pushbroom camera, using a 128-element line array, designed for operation on the 24-inch Cassegrain telescope at the JPL Table Mountain Observatory. The design and construction of the camera are described.

Herring, M.

Operation of integrating indium antimonide linear arrays at 65 K and below

The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

Bailey, G. C.

Integrating 128-element linear imager for the 1 to 5 microns region

Useful charge integration has been achieved in high quality photovoltaic InSb diodes when combined with a FET multiplexing (MUX) scheme. An experimental detector assembly with a linear array of 128 InSb diodes coupled to a FEX MUX has been developed. The first stage J-FET preamp, pixel reset switch, MUX, and the InSb array are contained in a hybrid microcircuit of compact dimensions. A low noise preamplifier topology which capitalizes on the low video line capacitance inherent with hybrid fabrication techniques is also utilized. Measurements indicate a signal-to-noise ratio of over 1000:1 and response uniformity of + or - 2 percent. Sample images show subtle detail which supports the estimated radiometric sensitivity of 0.01 K.

Bailey, G. C.

Thick-film preamplifier

Preamplifier with hybrid discrete components and integrated-circuit packaging is designed specifically for use as television image-tube output signal conditioner. Circuit is fabricated on alumina substrate, measuring 0.5 by 0.5 by 0.015 inch using gold-base conductor with conductive gold crossovers and dielectric insulation.

Bailey, G. C.