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Bailey, Jeff

Publications and source records attributed to Bailey, Jeff.

16 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Understanding What Limits the Voltage of Polycrystalline CdSeTe Solar Cells

The origin of voltage deficits in polycrystalline cadmium selenide telluride (CdSeTe) solar cells is unclear. Here, we present a comprehensive voltage loss analysis performed on state-of-the-art CdSeTe devices - fabricated at Colorado State University and First Solar - using photoluminescence techniques, including external radiative efficiency (ERE) measurements. More specifically, we report the thermodynamic voltage limit Voc,ideal, internal voltage iVoc and external voltage Voc of partially and fully finished cells fabricated with different dopant species, dopant concentrations and back contacts. Arsenic-doped aluminium-oxide-passivated cells made at Colorado State University present remarkably high ERE (>1%) - translating into iVoc above 970 mV - but suffer from poor back-contact selectivity. On the other hand, arsenic-doped devices from First Solar present almost perfect carrier selectivity (Voc=iVoc), leading to Voc above 840 mV, and are limited by recombination in various parts of the device. Thus, development of contact structures that are both passivating and selective in combination with highly luminescent absorbers is key to reducing voltage losses.

CdSeTe devices↗
DOE OSTI2020

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se 2 absorber materials

Using a combination of optical and electrical measurements, we develop a model for metastable defects in Ag-alloyed Cu(In,Ga)Se 2 , one of the leading thin film photovoltaic materials. By controlling the pre-selenization conditions of the back contact prior to the growth of polycrystalline (Ag,Cu)(In,Ga)Se 2 absorbers and subsequently exposing them to various stresses (light soaking and dark-heat), we explore in this paper the nature and role of metastable defects on the electro-optical and photovoltaic performance of high-efficiency solar cell materials and devices. Positron annihilation spectroscopy indicates that dark-heat exposure results in an increase in the concentration of the selenium–copper divacancy complex (V Se –V Cu ), attributed to depassivation of donor defects. Deep-level optical spectroscopy finds a corresponding increase of a defect at Ev+0.98 eV, and deep-level transient spectroscopy suggests that this increase is accompanied by a decrease in the concentration of mid-bandgap recombination centers. Time-resolved photoluminescence excitation spectroscopy data are consistent with the presence of the V Se –V Cu divacancy complex, which may act as a shallow trap for the minority carriers. Light-soaking experiments are consistent with the V Se –V Cu optical cycle proposed by Lany and Zunger, resulting in the conversion of shallow traps into recombination states that limit the effective minority carrier recombination time (and the associated carrier diffusion length) and an increase in the doping density that limits carrier extraction in photovoltaic devices.

14 SOLAR ENERGY↗
DOE OSTI2019

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe 2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope

A new experimental framework for the characterization of defects in semiconductors is demonstrated. Through the direct, energy-resolved correlation of three analytical techniques spanning six orders of magnitude in spatial resolution, a critical mid-bandgap electronic trap level (E V + 0.56 eV) within Ag 0.2 Cu 0.8 In 1–x Ga x Se 2 is traced to its nanoscale physical location and chemical source. This is achieved through a stepwise, site-specific correlated characterization workflow consisting of device-scale (≈1 mm 2 ) deep level transient spectroscopy (DLTS) to survey the traps present, scanning probe–based DLTS (scanning-DLTS) for mesoscale-resolved (hundreds of nanometers) mapping of the target trap state’s spatial distribution, and scanning transmission electron microscope based electron energy-loss spectroscopy (STEM-EELS) and X-ray energy-dispersive spectroscopy for nanoscale energy-, structure, and chemical-resolved investigation of the defect source. Furthermore, this first demonstration of the direct observation of sub-bandgap defect levels via STEM-EELS, combined with the DLTS methods, provides strong evidence that the longsuspected Cu In/Ga substitutional defects are indeed the most likely source of the E V + 0.56 eV trap state and serves as a key example of this approach for the fundamental identification of defects within semiconductors, in general.

14 SOLAR ENERGY↗
DOE OSTI2018

The role of oxygen doping on elemental intermixing at the PVD-CdS/Cu (InGa)Se 2 heterojunction

Elemental intermixing at the CdS/CuIn 1-x Ga x Se 2 (CIGS) heterojunction in thin-film photovoltaic devices plays a crucial role in carrier separation and thus device efficiency. Here, using scanning transmission electron microcopy in combination with energy dispersive X-ray mapping, we find that by controlling the oxygen in the sputtering gas during physical vapor deposition (PVD) of the CdS, we can tailor the degree of elemental intermixing. More oxygen suppresses Cu migration from the CIGS into the CdS, while facilitating Zn doping in the CdS from the ZnO transparent contact. Very high oxygen levels induce nanocrystallinity in the CdS, while moderate or no oxygen content can promote complete CdS epitaxy on the CIGS grains. Regions of cubic Cu 2 S phase were observed in the Cu-rich CdCuS when no oxygen is included in the CdS deposition process. In the process-of-record sample (moderate O 2 ) that exhibits the highest solar conversion efficiency, we observe a ~26-nm-thick Cu-deficient CIGS surface counter-doped with the highest Cd concentration among all of the samples. Cd movement into the CIGS was found to be less than 10 nm deep for samples with either high or zero O 2 . Lastly, the results are consistent with the expectation that Cd doping of the CIGS surface and lack of Zn diffusion into the buffer both enhance device performance.

14 SOLAR ENERGY↗
DOE OSTI2018

Voltage-Induced Charge Redistribution in Cu(In,Ga)Se 2 Devices Studied With High-Speed Capacitance–Voltage Profiling

Devices made from Cu(In, Ga)Se 2 (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. In conclusion, the large deep defect levels are high enough to limit minority carrier lifetime and cell efficiency.

14 SOLAR ENERGY↗
DOE OSTI2018

Optical Spectroscopic Probes of Degradation and Metastability in Polycrystalline (Ag,Cu)(In,Ga)Se2 Absorbers

We employ optical spectroscopic probes, based on steady-state photoluminescence (SSPL) and time-resolved photoluminescence (TRPL) excitation spectroscopy to spatially and energetically resolve metastable defects in polycrystalline (Ag,Cu)(In,Ga)Se 2 (ACIGS) absorbers. First, we show that ACIGS has similar potential fluctuations as CIGS; that is alloying with Ag does not result in significant changes in the electronic disorder. We subsequently demonstrate that optical spectroscopy is able to identify metastable defects states in ACIGS, the nature of which is subtly modified by dark-heat degradation. These defects are converted into minority carrier lifetime-limiting recombination states upon light-soaking under 1 Sun illumination for 24 hours. We identify the activation energy for thermal emission from trap states near the front surface of the ACIGS absorber. Finally, variation of the excitation wavelength reveals the depth distribution of the shallow defects. We tentatively ascribe the defects to complexes that include Se-vacancies.

14 SOLAR ENERGY↗
DOE OSTI2017

How Does CIGS Performance Depend on Temperature at the Microscale?

Unveiling the correlation among electrical performance, elemental distribution, and defects at the microscale is crucial for the understanding and improvement of the overall solar cell performance. While this is true in general for solar cells with polycrystalline absorber layers, it is particularly critical for defect engineering of the complex quaternary CuIn x Ga 1-x Se 2 (CIGS) material system. Studying these relationships under standard ambient conditions can provide important insights but does not provide input on the behavior of the cell under real operating conditions. In this contribution, we take a close look at the complex temperature dependence of defects and voltage in CIGS at the microscale. We have developed correlative X-raymicroscopymethods and adapted them for temperature-dependent measurements of the locally generated voltage and elemental compositions at the microscale. We have applied these techniques to industrial CIGS solar cells covering temperatures from room temperature up to 100 degrees C. Finally, we find underperforming areas spanning multiple grains that do not correlate with the elemental distribution of major absorber constituents. However, we demonstrate that low-performing areas perform better at higher temperatures relative to the high-performing areas.

25 ENERGY STORAGE↗
DOE OSTI2017

Cd doping at PVD-CdS/CuInGaSe 2 heterojunctions

In this paper, we report on direct evidence of Cd doping of the CuInGaSe 2 (CIGS) surface in physical vapor deposited (PVD) CdS/CIGS heterojunctions by scanning transmission electron microscopy (STEM) and related techniques. We find Cd doping of the CIGS near-surface region regardless of the presence or absence of Cu rich domains in the CdS for both zinc-blende (zb) and wurtzite (wz) CdS. However, we find that the Cd penetrates much farther into the CIGS when Cu-rich domains are present in the CdS. This suggests that Cu exchanges with Cd, increasing the concentration gradient for Cd in the CIGS and thus driving Cd into the CIGS surface. The Cd doping is clearly resolved at atomic resolution in aberration-corrected STEM-high angle annular dark field images. In zb-CdS/CIGS heterojunctions, Cd is shown to substitute for both Cu and Ga atoms, while in wz-CdS/CIGS heterojunctions Cd seems to predominantly occupy Cu sites. Finally, Cd doping in the CIGS surface layer suggests the formation of a p-n homojunction in the CIGS, which may account for the high device efficiencies, comparable to CBD-CdS/CIGS processed structures.

14 SOLAR ENERGY↗
DOE OSTI2016

Intermixing and Formation of Cu-Rich Secondary Phases at Sputtered CdS/CuInGaSe 2 Heterojunctions

In this work, the Cu migration behavior in PVD-CdS/PVD-Cu(In,Ga)Se 2 (CIGS) heterojunctions is investigated by high-resolution electron microscopy (HREM) and energy dispersive X-ray spectroscopy (EDS). Incorporation of Cu into the CdS forms Cu-rich domains but has no effect on epitaxy of the CdS. Epitaxy is commonly observed in the CdS studied. Secondary ion mass spectroscopy depth profiles confirm the presence of Cu in the CdS. In some cases, Cd is completely replaced by Cu, resulting in a Cu-S binary compound epitaxially grown on the CIGS and fully coherent with the surrounding CdS. This is most likely to be cubic Cu 2 S, based on lattice spacing measurements from HREM images and EDS elemental quantification. In addition, we find that the buffer layer crystal structure influences the extent of Ga depletion at the CIGS surface, which is more pronounced adjacent to zinc-blende CdS than wurtzite CdS. Density functional theory calculations reveal that Cu clustering and different Ga depletion widths can be attributed to the inherent anisotropy of wurtzite CdS and differences in CIGS point-defect migration barriers. Understanding the influence of these effects on device properties is a critical step in developing more efficient CdS/CIGS-based photovoltaics.

14 SOLAR ENERGY↗
NASA NTRS2013

Alabama Ground Operations during the Deep Convective Clouds and Chemistry Experiment

The Deep Convective Clouds and Chemistry (DC3) field campaign investigates the impact of deep, midlatitude convective clouds, including their dynamical, physical and lighting processes, on upper tropospheric composition and chemistry. DC3 science operations took place from 14 May to 30 June 2012. The DC3 field campaign utilized instrumented aircraft and ground ]based observations. The NCAR Gulfstream ]V (GV) observed a variety of gas ]phase species, radiation and cloud particle characteristics in the high ]altitude outflow of storms while the NASA DC ]8 characterized the convective inflow. Groundbased radar networks were used to document the kinematic and microphysical characteristics of storms. In order to study the impact of lightning on convective outflow composition, VHF ]based lightning mapping arrays (LMAs) provided detailed three ]dimensional measurements of flashes. Mobile soundings were utilized to characterize the meteorological environment of the convection. Radar, sounding and lightning observations were also used in real ]time to provide forecasting and mission guidance to the aircraft operations. Combined aircraft and ground ]based observations were conducted at three locations, 1) northeastern Colorado, 2) Oklahoma/Texas and 3) northern Alabama, to study different modes of deep convection in a variety of meteorological and chemical environments. The objective of this paper is to summarize the Alabama ground operations and provide a preliminary assessment of the ground ]based observations collected over northern Alabama during DC3. The multi ] Doppler, dual ]polarization radar network consisted of the UAHuntsville Advanced Radar for Meteorological and Operational Research (ARMOR), the UAHuntsville Mobile Alabama X ]band (MAX) radar and the Hytop (KHTX) Weather Surveillance Radar 88 Doppler (WSR ]88D). Lightning frequency and structure were observed in near real ]time by the NASA MSFC Northern Alabama LMA (NALMA). Pre ]storm and inflow proximity soundings were obtained with the UAHuntsville mobile sounding unit and the Redstone Arsenal (QAG) morning sounding.

Carey, Lawrence↗
NASA NTRS2006

The Washington DC Metro Area Lightning Mapping Array

During the spring and summer of 2006, a network of eight lightning mapping stations has been set up in the greater DC metropolitan area to monitor the total lightning activity in storms over Virginia, Maryland and the Washington DC area. The network is a joint project between New Mexico Tech, NASA, and NOAA/National Weather Service, with real-time data being provided to the NWS for use in their forecast and warning operations. The network utilizes newly available portable stations developed with support from the National Science Foundation. Cooperating institutions involved in hosting mapping stations are Howard University, Montgomery County Community College in Rockville MD, NOAA/NWS's Test and Evaluation Site in Sterling, VA, College of Southern Maryland near La Plata MD, the Applied Physics Laboratory of Johns Hopkins University, Northern Virginia Community College in Annandale, VA, the University of Maryland at Baltimore County, and George Mason University (Prince William Campus) in Manassas, VA. The network is experimental in that its stations a) operate in the upper rather than the lower VHF (TV channel 10, 192-198 MHz) to reduce the radio frequency background noise associated with urban environments, and b) are linked to the central processing site via the internet rather than by dedicated wireless communication links. The central processing is done in Huntsville, AL, and updated observations are sent to the National Weather Service every 2 min. The observational data will also be available on a public website. The higher operating frequency results in a decrease in signal strength estimated to be about 15-20 dB, relative to the LMA networks being operated in northern Alabama and central Oklahoma (which operate on TV channels 5 and 3, respectively). This is offset somewhat by decreased background noise levels at many stations. The receiver threshold levels range from about -95 dBm up to -80 dBm and the peak lightning signals typically extend 15-20 dB above the threshold values. Despite having decreased sensitivity, the network locates lightning in plan position over all of Maryland and Delaware, much of Virginia, and into Southern Pennsylvania and New Jersey. 3-D coverage is provided out to 100-150 km range from the Sterling WFO including the 3 major DC commercial airports (Reagan National, Dulles International, and Baltimore Washington International). The network will eventually consist of 10 or more stations, which will extend and improve its coverage.

Krehbiel, Paul↗
NASA NTRS1999

The Rondonia Lightning Detection Network: Network Description, Science Objectives, Data Processing/Archival Methodology, and First Results

A four station Advanced Lightning Direction Finder (ALDF) network was recently established in the state of Rondonia in western Brazil through a collaboration of U.S. and Brazilian participants from NASA, INPE, INMET, and various universities. The network utilizes ALDF IMPACT (Improved Accuracy from Combined Technology) sensors to provide cloud-to-ground lightning observations (i.e., stroke/flash locations, signal amplitude, and polarity) using both time-of-arrival and magnetic direction finding techniques. The observations are collected, processed and archived at a central site in Brasilia and at the NASA/ Marshall Space Flight Center (MSFC) in Huntsville, Alabama. Initial, non-quality assured quick-look results are made available in near real-time over the internet. The network will remain deployed for several years to provide ground truth data for the Lightning Imaging Sensor (LIS) on the Tropical Rainfall Measuring Mission (TRMM) satellite which was launched in November 1997. The measurements will also be used to investigate the relationship between the electrical, microphysical and kinematic properties of tropical convection. In addition, the long-term observations from this network will contribute in establishing a regional lightning climatological data base, supplementing other data bases in Brazil that already exist or may soon be implemented. Analytic inversion algorithms developed at NASA/Marshall Space Flight Center (MSFC) are now being applied to the Rondonian ALDF lightning observations to obtain site error corrections and improved location retrievals. The processing methodology and the initial results from an analysis of the first 6 months of network operations will be presented.

Blakeslee, Rich↗
NASA NTRS1994

Aircraft electric field measurements: Calibration and ambient field retrieval

An aircraft locally distorts the ambient thundercloud electric field. In order to determine the field in the absence of the aircraft, an aircraft calibration is required. In this work a matrix inversion method is introduced for calibrating an aircraft equipped with four or more electric field sensors and a high-voltage corona point that is capable of charging the aircraft. An analytic, closed form solution for the estimate of a (3 x 3) aircraft calibration matrix is derived, and an absolute calibration experiment is used to improve the relative magnitudes of the elements of this matrix. To demonstrate the calibration procedure, we analyze actual calibration date derived from a Lear jet 28/29 that was equipped with five shutter-type field mill sensors (each with sensitivities of better than 1 V/m) located on the top, bottom, port, starboard, and aft positions. As a test of the calibration method, we analyze computer-simulated calibration data (derived from known aircraft and ambient fields) and explicitly determine the errors involved in deriving the variety of calibration matrices. We extend our formalism to arrive at an analytic solution for the ambient field, and again carry all errors explicitly.

Koshak, William J.↗
NASA NTRS1994

Field and data analysis studies related to the atmospheric environment

This report summarizes work on a broad array of projects including: (1) applications of meteorological and/or oceanographic satellites; (2) improvement of the current set of NASA/USAF lightning related launch commit criteria rules; (3) the design, building, testing and deployment of a set of cylindrical field mills for aircraft use; (4) the study of marginal electrification storm conditions in relationship to the current launch commit rules for the space shuttle and various other launch vehicles using an instrumented aircraft; (5) support of the DC-8 and ER-2 lightning instrument package as part of both the Tropical Ocean - Global Atmospheric/Coupled Ocean-Atmospheric Response Experiment and the Convection and Moisture Experiment; (6) design of electronic circuitry and microprocessor firmware for the NASA Advanced Ground Based Field Mill; (7) design and testing of electronic and computer instrumentation for atmospheric electricity measurements; (8) simulating observations from a lightning imaging sensor on the Tropical Rainfall Measuring satellite; and (9) supporting scientific visualization and the development of computer software tools.

Kidder, Stanley↗