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Banerjee, Sneha

Publications and source records attributed to Banerjee, Sneha.

9 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors

Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.

42 ENGINEERING↗
DOE OSTI2022

Influence of discharge polarity on streamer breakdown criterion of ambient air in a non-uniform electric field

Streamer breakdown of atmospheric air with non-uniform dc electric field in a needle-to-plate electrode configuration is studied using a semi-analytic model and experimental measurements. A high voltage (either positive or negative) is applied to a hollow needle with 0.51 mm outer diameter and 0.25 mm inner diameter separated from a planar ground electrode by a gap distance of 0.1–1.4 cm. Breakdown voltages are recorded for both positive and negative discharge polarities. Empirical relations between the critical avalanche size for streamer breakdown and the gap distance are proposed. Using these empirical relations, a semi-analytic model based on Meek's criterion for streamer breakdown is developed to accurately predict the measured breakdown voltages. It is found that for pd > 380 Torr cm (or d > 0.5 cm at one atmosphere) streamer breakdown of ambient air occurs at a lower applied voltage for a positively biased needle compared to that with a negatively biased needle, referred as the polarity effect. For pd < 380 Torr cm breakdown is attained at a lower applied voltage with a negatively biased needle compared to that with a positively biased needle, and breakdown mode transits from the polarity effect to the so called inverted polarity effect.

42 ENGINEERING↗
DOE OSTI2022

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. In this study, we review recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Furthermore, unsolved problems and challenges are also discussed.

2D materials↗