Engineering topics

Bar-Chaim, N.

Publications and source records attributed to Bar-Chaim, N..

2 records

NASA NTRS1982

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Bar-Chaim, N.↗

NASA NTRS1980

Large optical cavity AlGaAs injection lasers with multiple active regions

A new type of AlGaAs injection laser is presented whose basic structure consists of alternating p- and n-type layers of GaAs and Al(x)Ga(1-x), with the GaAs layers serving as the active regions of the device. The electrical mode of operation is found to be that of a bistable device (SCR) and not of a simple pn junction. Optically, the device oscillates in a 'supermode' made up of a coherent superposition of single waveguide modes. Possible applications include pulsed mode operation of injection lasers and power combining of the output of many individual lasers.

Katz, J.↗