Sub-Micron Long HTS Hot-Electron Mixers
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Engineering topics
Publications and source records attributed to Barner, J..
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We have measured the device length and temperature dependence of the intermediate frequency (IF) bandwidth and noise of hot-electron bolometert (HEB) mixers made from a high-T***subc*** superconductor.
We have systematically measured both the length and temperature dependence of the intermediate frequency (IF) bandwidth of hot-electron bolometer (HEB) mixer made form a high-T(sub c) superconductor (HTS).
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Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz.
A low-noise microwave receiver downconverter utilizing thin-film high-critical-temperature superconducting (HTS) passive circuitry and semiconductor active devices has been developed for use in space.
High frequency detector and circuit applications often require device fabrication on medium-to-low-dielectric constant substrates.
High-quality superconductor/normal-metal/superconductor(SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO(sub 3)/'seed layer'/cubic-zirconia (YS2) buffer system.
High-quality, epitaxial superconductor(S)/normal(N)/S edge-geometry weak-link Josephson devices were fabricated.
The composition of pulsed-laser-deposited Y-Ba-Cu-O and Ba-K-Bi-O thin films is shown to be strongly affected by target conditioning, gas pressure, and target-substrate distance.