Engineering topics
Barsky, M.
Publications and source records attributed to Barsky, M..
First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies
Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.
Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
0.1um InP HEMT devices and MMICs for cryogenic low noise amplifiers from x-band to w-band
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MMIC low-noise amplifiers and applications above 100 GHz
This paper will propose one vision for an interstellar program. It will include a discussion of mission concepts as well as technological requirements for accomplishing those missions.
MMIC Low-Noise Amplifiers and Applications above 100 GHz
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160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
An InP HEMT MMIC LNA with 7.2 dB Gain at 190 GHz
We present the highest frequency performance of any solid state MMIC amplifier.
InP HEMT MMICs for Radiometer Applications
We present results of developments of low noise millimeter wave receivers for space applications utilizing InP HEMT monolithic microwave integrated circuts (MMICs).