Engineering topics

Basak, Rourav

Publications and source records attributed to Basak, Rourav.

4 records

DOE OSTI2024

Direct detection system for full-field nanoscale X-ray diffraction-contrast imaging

Recent developments in X-ray science provide methods to probe deeply embedded mesoscale grain structures and spatially resolve them using dark field X-ray microscopy (DFXM). Extending this technique to investigate weak diffraction signals such as magnetic systems, quantum materials and thin films prove challenging due to available detection methods and incident X-ray flux at the sample. We present a direct detection method developed in conjunction with KAImaging which focuses on DFXM studies in the hard X-ray range of 10s of keV and above capable of approaching nanoscale resolution. Additionally, we compare this direct detection scheme with routinely used scintillator-based optical detection and achieve an order of magnitude improvement in exposure times allowing for imaging of weakly diffracting ordered systems.

47 OTHER INSTRUMENTATION↗

DOE OSTI2024

Structural Changes in YBa 2 Cu 3 O 7 Thin Films Modified with He + -Focused Ion Beam for High-Temperature Superconductive Nanoelectronics

Irradiation of high-temperature superconductor YBa 2 Cu 3 O 7 (YBCO) with high-energy He + ions is known to cause structural changes in the YBCO film, decreasing the critical temperature T C and finally leading to a superconductor-to-insulator transition. Here, this allows one to pattern narrow insulating regions with a focused ion beam (FIB) and thus fabricate nanoscale Josephson junctions on YBCO films. Moreover, such ion irradiation is known to cause structural changes in the YBCO film. However, details of how these structural changes occur in nanoscale devices produced by FIB remain unknown. Using nanofocus X-ray diffraction, we study the changes in the YBCO crystal lattice and investigate how the nature of these changes depends on the size of the irradiated regions. These data provide an important understanding of how oxide superconductors can be tailored at the nanometer scale for various applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Antiferromagnetic order in the layered magnetic topological insulator MnBi 2 ⁢Se 4 probed by resonant soft x-ray scattering

The quasi-two-dimensional magnetic topological insulator MnBi 2 Se 4 , stabilized via nonequilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers (∼13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose magnetic nature is validated by studying its temperature, energy, and polarization dependence. Through a detailed analysis, an A-type antiferromagetic order with in-plane moments is implied. This alternative spin structure in MnBi 2 Se 4 , in contrast to the Ising antiferromagnetic states in other magnetic topological insulators, might be relevant for hosting new topological states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Spectral evidence for local-moment ferromagnetism in the van der Waals metals $\mathrm{Fe_3GaTe_2}$ and $\mathrm{Fe_3GeTe_2}$

Magnetism in two-dimensional (2D) materials has attracted considerable attention recently for both fundamental understanding of magnetism and its tunability towards device applications. The isostructural Fe 3 GeTe 2 and Fe 3 GaTe 2 are two members of the Fe-based van der Waals (vdW) ferromagnet family, but exhibit very different Curie temperatures (T C ) of 210 and 360 K, respectively. In this report by using angle-resolved photoemission spectroscopy and density functional theory, we systematically compare the electronic structures of the two compounds. Qualitative similarities in the Fermi surface can be found between the two compounds, with expanded hole pockets in Fe 3 GaTe 2 suggesting additional hole carriers compared to Fe 3 GeTe 2 . Interestingly, we observe almost no band shift in Fe 3 GaTe 2 across its T C of 360 K, compared to a small shift in Fe 3 GeTe 2 across its T C of 210 K. The weak temperature-dependent evolution strongly deviates from the expectations of an itinerant Stoner mechanism. Our results suggest that itinerant electrons have minimal contributions to the enhancement of T C in Fe 3 GaTe 2 compared to Fe 3 GeTe 2 , and that the nature of ferromagnetism in these Fe-based vdW ferromagnets must be understood with considerations of the electron correlations.

36 MATERIALS SCIENCE↗