Spin reorientation driven exchange bias in hematite/permalloy heterostructures
Explore the source record for details and available documents.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Engineering topics
Basaran, Ali C.
Publications and source records attributed to Basaran, Ali C..
Low-temperature spin Seebeck effect in nonmagnetic vanadium dioxide
The spin Seebeck effect (SSE) is sensitive to thermally driven magnetic excitations in magnetic insulators. Vanadium dioxide in its insulating low-temperature phase is expected to lack magnetic degrees of freedom, as vanadium atoms are thought to form singlets upon dimerization of the vanadium chains. Instead, we find a paramagnetic SSE response in VO 2 films that grows as the temperature decreases below 50 K. The field and temperature-dependent SSE voltage is qualitatively consistent with a general model of paramagnetic SSE response and inconsistent with triplet spin transport. Quantitative estimates find a spin Seebeck coefficient comparable in magnitude to that observed in strongly magnetic materials. Finally, the microscopic nature of the magnetic excitations in VO 2 requires further examination.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Antiferromagnetic V 2 O 3 based exchange coupling
Vanadium sesquioxide (V 2 O 3 ) is a strongly correlated electronic material that famously undergoes a triple coupled first-order transition where it transitions from a paramagnetic metal with a rhombohedral structure at high temperature to an antiferromagnetic insulator with a monoclinic structure. While several studies have used one of both electronic and structural transitions to control the properties of a heterostructure, evidence of magnetic coupling has notoriously yet to be found. In this paper, we report on a robust magnetic coupling between the antiferromagnetic (AFM) V 2 O 3 and ferromagnetic (FM) Permalloy (Py) layers that results in a significant exchange bias and strain-induced coercivity enhancement. We provide a temperature and angle-dependent study of magnetic properties, which clearly indicates exchange bias at the AFM/FM interface that appears at the onset of the metal-insulator transition. The magnitude of the exchange bias is strongest when the field is applied along the [001] V 2 O 3 crystallographic orientation which corresponds to an AFM spin configuration on the [110] surface. Here, this opens the door to designing and implementing novel functionalities in transition metal oxide-based computing using the connection between magnetism and the metal-insulator transition.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗