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Basnet, Rabindra

Publications and source records attributed to Basnet, Rabindra.

22 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

The ZrSiS family of compounds hosts various exotic quantum phenomena due to the presence of both topological nonsymmorphic Dirac fermions and nodal-line fermions. In this material family, the LnSbTe (Ln = lanthanide) compounds are particularly interesting owing to the intrinsic magnetism from magnetic Ln which leads to new properties and quantum states. Here in this work, the authors focus on the previously unexplored compound SmSbTe. The studies reveal a rare combination of a few functional properties in this material, including antiferromagnetism with possible magnetic frustration, electron correlation enhancement, and Dirac nodal-line fermions. These properties enable SmSbTe as a unique platform to explore exotic quantum phenomena and advanced functionalities arising from the interplay between magnetism, topology, and electronic correlations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Highly sensitive spin-flop transition in antiferromagnetic van der Waals material M PS 3 ( M = Ni and Mn)

Recent developments in two-dimensional (2D) magnetism have motivated the search for van der Waals (vdW) magnetic materials to explore magnetic phenomena in the 2D limit. Metal thiophosphates, MPX 3 , are a class of magnetic vdW materials with antiferromagnetic ordering persisting down to the atomically thin limit. The magnetism in this material family has been found to be highly dependent on the choice of transition metal M. In this paper, we have synthesized the intermediate compounds Ni 1–x Mn x PS 3 (0 ≤ x ≤ 1) and investigated their magnetic properties. Our study reveals that the variation of Ni and Mn content in Ni 1–x Mn x PS 3 can efficiently tune the spin-flop transition, likely due to the modulation of the magnetic anisotropy. Such effective tuning offers a promising candidate to engineer 2D magnetism for future device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl 3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe 2 , and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl 3 . Here, this leads to the best-reported monolayer graphene mobilities (4900 cm 2 /(V s)) at these high hole densities (3 × 10 13 cm -2 ) and yields larger charge transfer to bilayer graphene (6 × 10 13 cm -2 ).

2D atomic crystals↗