Engineering topics

Batchman, T. E.

Publications and source records attributed to Batchman, T. E..

9 records

NASA NTRS1985

Investigation of semiconductor clad optical waveguides

A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

Batchman, T. E.↗

NASA NTRS1984

Investigation of the quantum efficiency of optical heterodyne detectors

The frequency response and quantum efficiency of optical photodetectors for heterodyne receivers is investigated. The measurements utilized two spectral lines from the output of two lasers as input to the photodetectors. These lines are easily measurable in power and frequency and hence serve as known inputs. By measuring the output current of the photodetector the quantum efficiency is determined as a function of frequency separation between the two input signals. An investigation of the theoretical basis and accuracy of this type of measurement relative to similar measurements utilizing risetime is undertaken. A theoretical study of the heterodyne process in photodetectors based on semiconductor physics is included so that higher bandwidth detectors may be designed. All measurements are made on commercially available detectors and manufacturers' specifications for normal photodetector operation are compared to the measured heterodyne characteristics.

Batchman, T. E.↗

NASA NTRS1984

Polarization effects in silicon-clad optical waveguides

By changing the thickness of a semiconductor cladding layer deposited on a planar dielectric waveguide, the TE or TM propagating modes may be selectively attenuated. This polarization effect is due to the periodic coupling between the lossless propagating modes of the dielectric slab waveguide and the lossy modes of the cladding layer. Experimental tests involving silicon claddings show high selectivity for either polarization.

Carson, R. F.↗

NASA NTRS1982

Measurement and analysis of periodic coupling in silicon-clad planar waveguides

Computer modeling studies indicate that planar dielectric waveguides clad with silicon exhibit a damped periodic oscillation in their attenuation and phase characteristics. The effect is due to a periodic coupling between the lossy, guided modes in the silicon film and the TE0 mode of the dielectric waveguide. Experimental confirmation of the periodic coupling for a wavelength of 632.8 nm is presented. Propagation characteristics for a wavelength of 1150 nm were investigated for application in integrated optical modulators. Frequency filtering properties of silicon-clad waveguides are also examined and it is shown that the silicon thickness controls the filter response curve.

Mcwright, G. M.↗

NASA NTRS1982

Investigation of semiconductor clad optical waveguides

Glass waveguides are studied because of the ease and economy of fabricating devices in glass. All calculations are based on the assumption of a glass guide and substrate, but the effects being studied will occur on other materials if the proper refractive indices are used in the calculations.

Batchman, T. E.↗

NASA NTRS1981

Investigation of semiconductor clad optical waveguides

The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.

Batchman, T. E.↗

NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗

NASA NTRS1981

Investigation of direct integrated optics modulators

Direct optical modulation techniques applicable to integrated optical data preprocessors were studied. Emphasis was placed on the analysis and fabrication of a field effect type modulator. A series of computer modeling studies were performed to determine the effects of semiconductor cladding on the fields of propagating waves in planar dielectric waveguides. These studies predicted that changes in the propagation characteristics of waveguides clad with silicon and gallium arsenide could be made large enough to be useful in modulators. These effects are dependent on the complex permittivity and thickness of the cladding. Since the conductivity of the cladding can be changed by the photon generation of hole-electron pairs, incoherent light may be used as the input to modulate a coherent light beam. Waveguides were fabricated and silicon claddings were applied to verify the theoretical predictions.

Batchman, T. E.↗

NASA NTRS1980

Investigation of direct integrated optics modulators

Direct modulation techniques applicable to integrated optics data preprocessors were investigated. Several methods of modulating a coherent optical beam by interaction with an incoherent beam were studied. It was decided to investigate photon induced conductivity changes in thin semiconductor cladding layers on optical waveguides. Preliminary calculations indicate significant changes can be produced in the phase shift in a propagating wave when the conductivity is changed by ten percent or more. Experimental devices to verify these predicted phase changes and experiments designed to prove the concept are described.

Batchman, T. E.↗