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Bauers, Sage R.

Publications and source records attributed to Bauers, Sage R..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

GdWN 3 is a nitride perovskite

Nitride perovskites ABN3 are an emerging and highly underexplored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel A-site cations is one strategy to tune and expand such properties; for example, Gd 3+ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN 3 was a non-perovskite monoclinic structure. Here, we experimentally show that GdWN 3-y crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd 2-x W x N 3-y O y with oxygen content y < 0.05. Ex situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near x = 1. LeBail fits of synchrotron grazing incidence wide angle x-ray scattering data are consistent with a perovskite ground-state structure. Refined density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN 3 is a distorted Pnma perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN 3-y is paramagnetic down to T = 2 K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important path toward both the rapid expansion of the emerging family of nitride perovskites and understanding their potential multiferroic properties.

14 SOLAR ENERGY↗
DOE OSTI2024

Synthesis pathways to thin films of stable layered nitrides

Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin-film deposition methods with rapid condensation of vapour precursors can readily synthesize metastable phases but often struggle to yield the thermodynamic ground state. Growing thermodynamically stable structures using kinetically limited synthesis methods is important for practical applications in electronics and energy conversion. Here, in this study, we reveal a synthesis pathway to thermodynamically stable, ordered layered ternary nitride materials, and discuss why disordered metastable intermediate phases tend to form. We show that starting from elemental vapour precursors leads to a 3D long-range-disordered MgMoN 2 thin-film metastable intermediate structure, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. This synthesis approach is extended to ScTaN 2 , MgWN 2 and MgTa 2 N 3 , and may lead to the synthesis of other layered nitride thin films with unique semiconducting and quantum properties.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low‐Temperature Synthesis of Stable CaZn 2 P 2 Zintl Phosphide Thin Films as Candidate Top Absorbers

Abstract The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with bandgaps in the range of ≈1.5–2.3 eV, for use in the top cell paired with a narrower‐gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn 2 P 2 as a compelling candidate semiconductor for these applications. Phase‐pure, ≈500 nm‐thick CaZn 2 P 2 thin films are prepared using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. Ultraviolet‐visible spectroscopy shows that CaZn 2 P 2 films exhibit an optical absorptivity of ≈10 4 cm −1 at ≈1.95 eV direct bandgap. Room‐temperature photoluminescence (PL) measurements show near‐band‐edge optical emission, and time‐resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ≈30 ns. CaZn 2 P 2 is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first‐principles calculations, which indicate the absence of low‐formation‐energy, deep intrinsic defects. Overall, this study shall motivate future work integrating this potential top cell absorber material into tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

“Mn 3 AlN” is Really Mn 4 N

We investigate the synthesis of antiperovskite “Mn 3 AlN” using the published synthesis procedure, as well as several new reaction pathways. In each case, only a combination of antiperovskite Mn 4 N and Mn 5 Al 8 or precursors is obtained. The identity of the obtained antiperovskite phase is unambiguously determined to be Mn4N via synchrotron powder X-ray diffraction (SPXRD), X-ray absorption spectroscopy (XAS), and magnetometry. The experimental results are further supported by thermochemical calculations informed by density functional theory (DFT), which find Mn 3 AlN to be metastable versus decomposition into Mn and AlN. The DFT-based calculations also predict an antiferromagnetic ground state for Mn3AlN. This directly contradicts the previously reported ferromagnetic behavior of "Mn 3 AlN". Instead, the observed magnetic behavior is consistent with ferrimagnetic Mn 4 N. We examine the data in the original publication and conclude that the compound reported to be Mn 3 AlN is in fact Mn 4 N.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Emerging magnetic materials for electric vehicle drive motors [Slides]

Increasing demand for electric vehicles (EVs) is increasing demand for the permanent magnets that drive their motors, as approximately 80% of modern EV drivetrains rely on high-performance permanent magnets to convert electricity into torque. In turn, these high-performance permanent magnets rely on rare earth elements for their magnetic properties. These elements are "critical" (i.e., at risk of limiting the growth of renewable energy technologies such as EVs), which motivates an exploration for alternative materials. In this article, we overview the relevant fundamentals of permanent magnets, describe commercialized and emerging materials, and add perspective on future areas of research. Currently, the leading magnetic material for EV motors is Nd 2 Fe 14 B, with samarium-cobalt compounds (SmCo 5 and Sm 2 Co 17 ) providing the only high-performing commercialized alternative. Emerging materials that address criticality concerns include Sm 2 Fe 17 N 3 , Fe 16 N 2 , and the L10 structure of FeNi, which use lower cost elements that produce similar magnetic properties. However, these temperature-sensitive materials are incompatible with current metallurgical processing techniques. We provide perspective on how advances in low-temperature synthesis and processing science could unlock new classes of high-performing magnetic materials for a paradigm shift beyond rare earth-based magnets. In doing so, we explore the question: What magnetic materials will drive future EVs?

42 ENGINEERING↗
DOE OSTI2023

Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emission

Autonomous experimentation has emerged as an efficient approach to accelerate the pace of material discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials, and nanoparticles, examples of autonomous tools for physical vapor deposition are scarce yet important for the semiconductor industry. Here, we report the design and implementation of an autonomous workflow for sputter deposition of thin films with controlled composition, leveraging a highly automated sputtering reactor custom-controlled by Python, optical emission spectroscopy (OES), and a Bayesian optimization algorithm. We modeled film composition, measured by x-ray fluorescence, as a linear function of plasma emission lines monitored during co-sputtering from elemental Zn and Ti targets in an N 2 and Ar atmosphere. A Bayesian control algorithm, informed by OES, navigates the space of sputtering power to fabricate films with user-defined compositions by minimizing the absolute error between desired and measured optical emission signals. We validated our approach by autonomously fabricating Zn x Ti 1-x N y films that deviate from the targeted cation composition by a relative ±3.5%, even for 15 nm thin films, demonstrating that the proposed approach can reliably synthesize thin films with a specific composition and minimal human interference. Moreover, the proposed method can be extended to more difficult synthesis experiments where plasma intensity lines depend non-linearly on pressure, or the elemental sticking coefficients strongly depend on the substrate temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Measuring Photoexcited Electron and Hole Dynamics in ZnTe and Modeling Excited State Core-Valence Effects in Transient Extreme Ultraviolet Reflection Spectroscopy

Transient extreme ultraviolet (XUV) spectroscopy is becoming a valuable tool for characterizing solar energy materials because it can separate photoexcited electron and hole dynamics with element specificity. We use surface-sensitive femtosecond XUV reflection spectroscopy to separately measure photoexcited electron, hole, and band gap dynamics of ZnTe, a promising photocathode for CO 2 reduction. We develop an ab initio theoretical framework based on density functional theory and the Bethe-Salpeter equation to robustly assign the complex transient XUV spectra to the material's electronic states. Applying this framework, we identify the relaxation pathways and quantify their time scales in photoexcited ZnTe, including subpicosecond hot electron and hole thermalization, surface carrier diffusion, ultrafast band gap renormalization, and evidence of acoustic phonon oscillations.

14 SOLAR ENERGY↗
DOE OSTI2022

Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

Abstract With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p‐type transparent conductor. This work reports on reactive sputtering of amorphous BP films, their partial crystallization in a P‐containing annealing atmosphere, and extrinsic doping by C and Si. The highest hole concentration to date for p‐type BP (5 × 10 20 cm −3 ) is achieved using C doping under B‐rich conditions. Furthermore, bipolar doping is confirmed to be feasible in BP. An anneal temperature of at least 1000 °C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are stronger than that predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Reactive phosphine combinatorial co-sputtering of cation disordered ZnGeP2 films

The discovery of new materials by coupling high-throughput synthesis with computational screening is being increasingly adopted. However, thus far, phosphides have been largely overlooked for both computational screening and high-throughput synthesis. In this paper, we report on the use of a high-throughput synthesis technique, reactive combinatorial co-sputtering with PH 3 , to deposit ZnGeP 2 thin films. We grew amorphous films over a wide range of compositions and found an upper limit in growth temperature determined by Zn and P volatility. We found that depositing in a Ge-limited regime could be utilized to slow the growth rate to compensate for the desorption of the Zn and P. Crystalline films were achieved by depositing films at higher temperatures in this Ge-limited regime with a reduced deposition rate. X-ray diffraction revealed that the films had crystallized in the zinc blende, cation-disordered structure. The crystalline films exhibited optical absorption energy threshold values ranging from 0.8 to 1.3 eV. Increased Ge content was found in films that exhibited a decreased absorption onset energy. Native defect calculations were used to gain an understanding of the off-stoichiometry seen in these films. This work provides the first high-throughput investigation of ZnGeP 2 , demonstrating the ability to grow amorphous and cation disordered ZnGeP 2 over a wide range of compositions with varying optical properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics

Layered van der Waals heterostructures provide extraordinary opportunities for applications such as thermoelectrics and allow for tunability of optical and electronic properties. The performance of devices made from these heterostructures will depend on their properties, which are sensitive to the nanoarchitecture (constituent layer thicknesses, layer sequence, etc.). However, performance will also be impacted by defects, which will vary in concentration and identity with the nanoarchitecture and preparation conditions. Here, we identify several types of defects and propose mechanisms for their formation, focusing on compounds in the ([SnSe] 1+δ ) m (TiSe 2 ) n system prepared using the modulated elemental reactants method. The defects were observed by atomic resolution high-angle annular dark-field scanning transmission electron microscopy and can be broadly categorized into those that form domain boundaries as a result of rotational disorder from the self-assembly process and those that are layer-thickness-related and result from local or global deviations in the amount of material deposited. Furthermore, defect type and density were found to depend on the nanoarchitecture of the heterostructure. Categorizing the defects provides insights into defect formation in these van der Waals layered heterostructures and suggests strategies for controlling their concentrations. Strategies for controlling defect type and concentration are proposed, which would have implications for transport properties for applications in thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Understanding the Reactions Between Fe and Se Binary Diffusion Couples

Spurred by recent discoveries of high-temperature superconductivity in Fe-Se based materials, the magnetic, electronic, and catalytic properties of iron-chalcogenides have drawn significant attention. Furthermore, much remains to be understood about the sequence of phase formation in these systems. In this work, we shed light on this issue by preparing a series of binary Fe-Se ultrathin diffusion couples via designed thin film precursors and investigating their structural evolution as a function of composition and annealing temperature. Two previously unreported Fe-Se phases crystallized during the deposition process on a nominally room-temperature Si substrate in the 27-33% and 37-47% Fe (atomic percent) composition regimes. Both phases completely decompose after annealing to 200°C in a nitrogen glovebox. At higher temperatures, the sequence of phase formation is governed by Se loss in the annealing process, consistent with what would be expected from the phase diagram. Films rich in Fe (53-59% Fe) crystalized during deposition as β-FeSe (P4/nmm) with preferred c-axis orientation to the amorphous SiO 2 substrate surface, providing a means to non-epitaxial self-assembly of crystallographically aligned, iron-rich β-FeSe for future research. Our findings suggest the crystallization of binary Fe-Se compounds at room temperature via near diffusionless transformations should be a significant consideration in future attempts to prepare metastable ternary and higher order compounds containing Fe and Se.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SnS Homojunction Solar Cell with n-Type Single Crystal and p-Type Thin Film

Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p-type SnS polycrystalline thin films on the recently reported large n-type SnS single crystals. The p-type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n-type single crystal. In addition, the interface of the pn homojunctions is void-free and compositionally sharp. The SnS homojunction solar cell achieves an open-circuit voltage (VOC) of 360 mV, which is as large as the highest VOC of previously reported SnS-based heterojunction solar cells. The built-in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (n) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short-circuit current density (J SC ) of 7.5 mA cm -2 . Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable J SC as the conventional heterojunction cells (≈25 mA cm -2 ), high n exceeding 4–5% will be realized with improving the VOC.

14 SOLAR ENERGY↗