Sb doping via drive-in diffusion as an alternative to in-situ doping in VTD
Group-V doping can enhance the efficiency of CdTe photovoltaic devices by increasing the open-circuit voltage (Voc), if long lifetimes can be retained and radiative voltage loss can be avoided. In this preliminary study, ex-situ Sb doping via drive-in diffusion improved grain sizes compared to Sb-free films without CdCl2 treatment. Sb doping did not reduce the carrier lifetime for uniform CdSeTe absorbers. Additionally, the CST-air surface recombination decreased with Sb. No potential fluctuations were observed by PL at this doping level. The [Sb] and carrier concentration for this study are not yet measured so the conclusions drawn are all preliminary