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Beatty, M. E., III

Publications and source records attributed to Beatty, M. E., III.

7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Optical and holographic storage properties of F3, Cu, and Mg-doped lithium niobate

Several samples of iron, copper, and magnesium doped lithium niobate were tested to determine their storage properties which would be applicable to an optical data storage system and an integrated optics data preprocessor which makes use of holographic storage techniques. The parameters of interest were the diffraction efficiency, write power, write time, erase time, erase energy, and write sensitivity. Results of these parameters are presented. It was found that iron doped lithium niobate samples yielded the best results in all parameters except for a few percent higher diffraction efficiency in copper doped samples. The magnesium doped samples were extremely insensitive and are not recommended for use in holographic optical data storage and processing systems.

Beatty, M. E., III↗
NASA NTRS1976

Effects of 1- and 2-MeV electrons on photomultiplier tubes

Various types of photomultiplier tubes useful for space applications were irradiated with 1- and 2-MeV electrons at Van Allen radiation belt fluxes of 100,000 to 10 millions electrons/sq cm-sec. The increase in the dark current due to electron irradiation was observed at various bias voltages under worst-case conditions (no shielding). Results were presented in the form of dark current plotted against electron flux. All the tubes tested showed extremely large increases in dark current. Tube types 541A, 6217, 6199, and 6903 exhibited the largest increases under irradiation, whereas type 1P22 was affected the least. All the damage observed was transient. The luminescence produced in the optical window probably accounts for a large part of the dark-current increases, but there were some effects possibly due to direct irradiation of the photocathode and dynode chain.

Beatty, M. E., III↗
NASA NTRS1972

Effects of 22 MeV protons on single junction and silicon controlled rectifiers

The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rectifiers were investigated. The results show that low-leakage devices and silicon controlled rectifiers are the most susceptable to radiation damage. There are also differences noted between single junction rectifiers of the same type made by different manufacturers, which emphasizes the need for better selection of devices used in spacecraft.

Beatty, M. E., III↗