The Effects of Gamma Ray Integrated Dose on a Commercial 65nm SRAM Device.
Abstract not provided.
Black, Jeffrey↗
Engineering topics
Black, Dolores
Publications and source records attributed to Black, Dolores.
Multiscale System Modeling of Single-Event-Induced Faults in Advanced Node Processors
Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system scope, we present a multiscale simulation framework. Charge collection at the 1) device level determines 2) circuit-level transient duration and state-upset likelihood. Circuit effects, in turn, impact 3) register-transfer-level architecture-state corruption visible at 4) the system level. Furthermore, the physically accurate effects of SEEs in large-scale systems, executed on a high-performance computing (HPC) simulator, could be used to drive cross-layer radiation hardening by design. We demonstrate the capabilities of this model with two case studies. First, we determine a D flip-flop’s sensitivity at the transistor level on 14-nm FinFet technology, validating the model against published cross sections. Second, we track and estimate faults in a microprocessor without interlocked pipelined stages (MIPS) processor for Adams 90% worst case environment in an isotropic space environment.
42 ENGINEERING↗
Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology
Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.
42 ENGINEERING↗
Combined Environments: Driving multiple loads on Z
Pulsed power drivers such as the Z generator of Sandia National Laboratories typically deliver high current (>20MA) to single experiments. This project is intended to develop and assess ways to simultaneously drive multiple targets on a single pulsed power driver (specifically a neutron and an x-ray producing target driven in a single experiment). The combined x-ray/neutron environment produced will then be used to investigate potential synergistic effects in integrated circuits. A pre-requisite for being able to design and study multiple targets on Z is first adapting simulation tools to be able to model them effectively. This will enable us to assess the tradeoffs between the different ways multiple targets can be combined, and to better understand how existing and future pulsed power machines can be used to generate combined testing environments. This report is limited to documenting the initial development of a parallel load modeling capability that is presently being applied to design experiments to produce combined neutron/x-ray environments on Z.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗