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Black, Dolores Archuleta

Publications and source records attributed to Black, Dolores Archuleta.

Dynamic Testing of a Commercial FRAM Device Under Gamma Ray Dose and Neutron Beam

Here, this work presents dose rate and neutron testing on a ferroelectric random-access memory (FRAM) device in dynamic operation during radiation pulses. Radiation failure modes are shown to be unique. Dose rate failure is shown to be based primarily on integrated dose in the radiation pulse and terminates the FRAM operation and can alter up to 8 bytes of data in storage. Neutron failures are attributed to a shifting of data like a clocking error.

Harris, Nathan↗

The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device

Here this work shows that the static random access memory (SRAM) error rate for a commercial 65-nm device in a dose rate environment can be highly dependent upon the integrated dose (dose rate × pulse duration). While the typical metric for such testing is dose rate upset (DRU) level in rad(Si)/s, a series of dose rate experiments at Little Mountain Test Facility (LMTF) shows dependence on the integrated dose. The error rate is also found to be dependent on the core voltage, and the preradiation value of the bits. We believe that these effects are explained by a well charge depletion caused by gamma ray photocurrent.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗