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Black, Jeffrey

Publications and source records attributed to Black, Jeffrey.

Dynamic Testing of a Commercial FRAM Device Under Gamma Ray Dose and Neutron Beam

Here, this work presents dose rate and neutron testing on a ferroelectric random-access memory (FRAM) device in dynamic operation during radiation pulses. Radiation failure modes are shown to be unique. Dose rate failure is shown to be based primarily on integrated dose in the radiation pulse and terminates the FRAM operation and can alter up to 8 bytes of data in storage. Neutron failures are attributed to a shifting of data like a clocking error.

Harris, Nathan↗

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

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