Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation
The low noise and radiation-hard operation of the SOI Four-Gate transistor (G4-FET) is eperimentally demonstrated.
SOI CMOS↗
Engineering topics
Blalock, B. J.
Publications and source records attributed to Blalock, B. J..
A novel four-quadrant analog multiplier using SOI four-gate transitors (G4-FETs)
A novel analog muliplier using SOI four-gate transistors (G4-FETs) is presented. Thanks to the multiple inputs of the G4-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers.
SOI CMOS↗
Noise performance of 0.35-(mu)m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation
This paper presents measured noise for 0.35(mu)m, silicon-on-insulator devices and a micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation. Flicker noise voltage, important for gyros having low frequency output, increases less than 32% after irradiation.
low power electronics↗
Complemenary body driving - a low voltage analog circuit technique for SOI
This paper describes several analog circuit primitives that utilize the body terminal as a signal port. A cascode current mirror that can operate with an input and output voltage of 200 mV; and a rail-to-rail, constant transconductance gain block capable of 1 V operation are presented. These circuits have been implemented in a standard 0.35~1 partially-depleted Silicon-on-Insulator (PDSOI) CMOS process and should find wide application in next-generation analog circuit designs.
neuro-prosthetic devices cortical signals↗
An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-Chip
The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.
Jackson, S. A.↗
A Library of Rad Hard Mixed-Voltage/Mixed-Signal Building Blocks for Integration of Avionics Systems for Deep Space
To build the sensor intensive system-on-a-chip for the next generation spacecrafts for deep space, Center for Integration of Space Microsystems at JPL (CISM) takes advantage of the lower power rating and inherent radiation resistance of Silicon on Insulator technology (SOI). We are developing a suite of mixed-voltage and mixed-signal building blocks in Honeywell's SOI process that can enable the rapid integration of the next generation avionics systems with lower power rating, higher reliability, longer life, and enhanced radiation tolerance for spacecrafts such as the Europa Orbiter and Europa Lander. The mixed-voltage building blocks are predominantly for design of adaptive power management systems. Their design centers around an LDMOS structure that is being developed by Honeywell, Boeing Corp, and the University of Idaho. The mixed-signal building blocks are designed to meet the low power, extreme radiation requirement of deep space applications. These building blocks are predominantly used to interface analog sensors to the digital CPU of the next generation avionics system on a chip. Additional information is contained in the original extended abstract.
Mojarradi, M. M.↗