Engineering topics

Boll, Greg

Publications and source records attributed to Boll, Greg.

3 records

NASA NTRS2011

On-Wafer S-Parameter Measurements in the 325-508-GHz Band

New circuits have been designed and fabricated with operating frequencies over 325 GHz. In order to measure S-parameters of these circuits, an extensive process of wafer dicing and packaging, and waveguide transition design, fabrication, and packaging would be required. This is a costly and time-consuming process before the circuit can be tested in waveguide. The new probes and calibration procedures will simplify the testing process. New on-wafer probes, and a procedure for their calibration, have been developed that allow fast and inexpensive S-parameter characterization of circuits in the 325 -508 -GHz frequency band. The on-wafer probes transition from rectangular waveguide to coplanar waveguide probe tips with 40- m nominal signal-to-ground pin pitch so as to allow for probing circuits on a wafer. The probes with bias tees have been optimized for minimal insertion loss and maximum return loss when placed on 50-ohm structures to allow for calibration. The calibration process has been developed using the Thru-Reflect-Line Agilent algorithm with JPL determined calibration structures and calibration coefficients for the algorithm. This new test capability is presently unique to JPL. With it, researchers will be able to better develop circuits such as low-noise amplifiers, power amplifiers, multipliers, and mixers for heterodyne receivers in the 325-508-GHz frequency band for remote sensing/spectroscopy.

Fung, King Man↗

NASA NTRS2006

Equipment for On-Wafer Testing From 220 to 325 GHz

A system of electronic instrumentation, constituting the equivalent of a two-port vector network analyzer, has been developed for use in on-wafer measurement of key electrical characteristics of semiconductor devices at frequencies from 220 to 325 GHz. A prior system designed according to similar principles was reported in Equipment for On-Wafer Testing at Frequencies Up to 220 GHz (NPO-20760), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 42. As one would expect, a major source of difficulty in progressing to the present higher-frequency-range system was the need for greater mechanical precision as wavelengths shorten into the millimeter range, approaching the scale of mechanical tolerances of prior systems. The system (see figure) includes both commercial off-the-shelf and custom equipment. As in the system of the cited prior article, the equipment includes test sets that are extended versions of commercial network analyzers that function in a lower frequency range. The extension to the higher frequency range is accomplished by use of custom frequency-extension modules that contain frequency multipliers and harmonic mixers. On-wafer measurement is made possible by waveguide wafer probes that were custom designed and built for this wavelength range, plus an on-wafer calibration substrate designed for use with these probes. In this case, the calibration substrate was specially fabricated by laser milling. The system was used to make the first on-wafer measurements of a semiconductor device in the frequency range from 220 to 320 GHz. Some of the measurement results showed that the device had gain.

Samoska, Lorene↗

NASA NTRS1999

On-Wafer Testing of Circuits Through 220 GHz

We have jointly developed the capability to perform on-wafer s-parameter and noise figure measurements through 220 GHz. S-parameter test sets have been developed covering full waveguide bands of 90-140 GHz (WR-08) and 140-220 GHz (WR-05). The test sets have been integrated with coplanar probes to allow accurate measurements on-wafer. We present the design and performance of the test sets and wafer probes. We also present calibration data as well as measurements of active circuits at frequencies as high as 215 GHz.

Gaier, Todd↗