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Boomer, Kristen

Publications and source records attributed to Boomer, Kristen.

12 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

Performance Evaluation of Isolated Gate Driver, ADuM4121, Under Exposure to Extreme Temperature

Electronics designed for use in space missions are expected to be exposed to harsh environment including radiation and extreme temperature, to name a few. Severe thermal swings are also encountered depending on planetary exploration, orbital orientation, and mission duration. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an isolated gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
NASA NTRS2019

Overview of NASA's Solar Electric Propulsion Project

NASA is continuing to develop and qualify a state of the art 13 kW-class Advanced Electric Propulsion System (AEPS) for NASA exploration missions through a contract with Aerojet Rocketdyne (AR). An objective of the AEPS project is accelerate the adoption of high power electric propulsion technologies by reducing the risk and uncertainty of integrating Solar Electric Propulsion (SEP) technologies into space flight systems. NASA and AR have recently initiated testing of engineering hardware including the Hall Current Thruster (HCT), Power Processing Unit (PPU), and Xenon Flow Controller (XFC) at both the component and system levels. The successful completion of these tests will provide the required information to advance the AEPS system towards Critical Design Review. In support of the AEPS contract, NASA and JPL have been performing risk reduction activities to address specific concerns of this higher power Hall thruster propulsion system. These risk reduction activities have included long duration wear testing of the Technology Demonstration Unit (TDU) Hall thruster and cathode hardware, thermal cycling of TDU cathode heaters and coils, plasma plume measurements, and performed early circuit testing of the AEPS PPU design. In addition to the propulsion system development, the SEP project is developing the Plasma Diagnostic Package (PDP) and the SEP Testbed. The PDP is designed for use in conjunction with a high-powered electric propulsion (EP) system to characterize in-space operation. The SEP Testbed system is being developed to demonstrate integrated SEP system performance. The paper presents an overview of the NASA and the AEPS contract activities and a summary of the associated NASA in-house activities.

Plasma diagnostics package↗
NASA NTRS2019

Overview of NASA's Solar Electric Propulsion Project

NASA is continuing to develop and qualify a state of the art 13 kW-class Advanced Electric Propulsion System (AEPS) for NASA exploration missions through a contract with Aerojet Rocketdyne. An objective of the AEPS project is to empower the US space industry to accelerate the adoption of high power electric propulsion technologies by reducing the risk and uncertainty of integrating Solar Electric Propulsion (SEP) technologies into space flight systems. NASA and AEPS contract has recently initiated engineering hardware testing of the Hall Current Thruster (HCT), Power Processing Unit (PPU), and Xenon Flow Controller (XFC) at both the component and system levels. The successful completion of these tests will provide the required information to advance the AEPS system towards Critical Design Review. In support of the AEPS contract, NASA and JPL have been performing risk reduction activities to address specific concerns of the state of the art higher power Hall thruster propulsion system. These risk reduction activities have included long duration wear testing of the Technology Demonstration Unit (TDU) Hall thruster and cathode hardware, thermal cycling testing of TDU cathode heaters and coils, plasma plume measurements, and investigating PPU design. In addition to NASA propulsion development, the SEP project is developing the Plasma Diagnostic Package (PDP) and the SEP Testbed. The PDP is designed for use in conjunction with a high powered EP system to characterize in-space operation. The SEP Testbed system is developed for demonstration of Abstract: NASA is continuing to develop and qualify a state of the art 13 kW-class Advanced Electric Propulsion System (AEPS) for NASA exploration missions through a contract with Aerojet Rocketdyne. An objective of the AEPS project is to empower the US space industry to accelerate the adoption of high power electric propulsion technologies by reducing the risk and uncertainty of integrating Solar Electric Propulsion (SEP) technologies into space flight systems. NASA and AEPS contract has recently initiated engineering hardware testing of the Hall Current Thruster (HCT), Power Processing Unit (PPU), and Xenon Flow Controller (XFC) at both the component and system levels. The successful completion of these tests will provide the required information to advance the AEPS system towards Critical Design Review. In support of the AEPS contract, NASA and JPL have been performing risk reduction activities to address specific concerns of the state of the art higher power Hall thruster propulsion system. These risk reduction activities have included long duration wear testing of the Technology Demonstration Unit (TDU) Hall thruster and cathode hardware, thermal cycling testing of TDU cathode heaters and coils, plasma plume measurements, and investigating PPU design. In addition to NASA propulsion development, the SEP project is developing the Plasma Diagnostic Package (PDP) and the SEP Testbed. The PDP is designed for use in conjunction with a high powered EP system to characterize in-space operation. The SEP Testbed system is developed for demonstration of an integrated SEP end-to-end system performance. The paper will present an overview of the NASA and the AEPS contract activities and a summary of the associated NASA in-house activities.

Plasma Diagnostics Package↗
NASA NTRS2019

Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space Applications

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Boomer, Kristen↗
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
NASA NTRS2019

Operation of Ultrafast, Low-Side MOSFET Driver, IXD609, over Wide Temperature Range

Electrical power and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. In addition, space-based infrared satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where system electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an ultrafast gate driver for controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗
NASA NTRS2018

Extreme Temperature Performance of Automotive-Grade Small Signal Bipolar Junction Transistors

Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.

Thermal Cycling↗
NASA NTRS2017

Evaluation of Fast Switching Diode 1N4448 Over a Wide Temperature Range

Electronic parts used in the design of power systems geared for space applications are often exposed to extreme temperatures and thermal cycling. Limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) electronic parts at temperatures beyond the manufacturers specified operating temperature range. This report summarizes preliminary results obtained on the evaluation of automotive-grade, fast switching diodes over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these diodes and to determine suitability for use outside their recommended temperature limits.

Thermal Cycling↗
NASA NTRS2016

Body of Knowledge for Silicon Carbide Power Electronics

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Silicon Carbide Power Electronics↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗