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Bose, S. M.

Publications and source records attributed to Bose, S. M..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

An explanation for the rise in Tc in the Tl- and Bi-based high temperature superconductors

Using the plasmon exchange model for the high T(sub c) superconductor, it is shown that the T(sub c) rises with an increase in the number of CuO layers per unit cell, which is in agreement with recent observations in the Tl- and Bi-based compounds. The calculation also suggests that the sample will become superconducting in successive stages and that there is a saturation effect, i.e., that T(sub c) cannot be raised indefinitely by increasing the number of CuO layers.

Bose, S. M.↗
NASA NTRS1990

An explanation for the rise in T(sub c) in the Tl- and Bi-based high temperature superconductors

Using the plasmon exchange model for the high T(sub c) superconductor, it is shown that the T(sub c) rises with an increase in the number of CuO layers per unit cell, which is in agreement with recent observations in the Tl- and Bi-based compounds. The calculation also suggests that the sample will become superconducting in successive stages and that there is a saturation effect, i.e., that T(sub c) cannot be raised indefinitely by increasing the number of CuO layers.

Bose, S. M.↗
NASA NTRS1989

Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces

A Green's-function method has been used to study the surface and interface electronic structures of the II-VI compounds HgTe and CdTe. Localized surface and resonance states near the cation-terminated (100) surface of CdTe and the anion-terminated surface of HgTe have been found for the ideal surfaces. The energies and strengths of these surface states are altered by surface perturbations. The bulk states near the surface are drastically modified by the creation of the surface, but the band gaps remain unchanged. Numerical evaluation of the local densities of states at the Gamma and J points shows that, at the (100) interface of HgTe/CdTe, the previously observed surface states are no longer present. However, in the interface region, bulk states of one material penetrate some distance into the other material.

Schick, J. T.↗
NASA NTRS1974

Coherent potential theory of a random binary alloy Effects of scattering from two-sites clusters and off-diagonal randomness

Extension of the single-site coherent potential approximation for random binary alloys to include the effect of off-diagonal randomness and pair scattering. This extension is achieved by analyzing a one-band model of a random binary alloy in terms of a two-sites coherent potential approximation. Numerical results are presented for a number of different alloys. In the overlapping-band case, the presence of off-diagonal randomness is shown to modify the bandwidths to values larger than those obtained from the virtual-crystal approximation. A simple iterative procedure is described for overcoming the convergence difficulties in the split-band case. In this limit, the inclusion of pair scattering and off-diagonal randomness is found to lead to the appearance of structure in the density of states of the minority component band.

Moorjani, K.↗