Engineering topics

Bothra, S.

Publications and source records attributed to Bothra, S..

4 records

NASA NTRS1990

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

Bhimnathwala, H. G.↗

NASA NTRS1990

Surface recombination velocity and lifetime in InP measured by transient microwave reflectance

Minority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.

Bothra, S.↗

NASA NTRS1987

Solar cells in bulk InP using an open tube diffusion process

A simple open tube diffusion technique for the fabrication of n+p junction solar cells is described. Large area (greater than 0.25 square cm) solar cells have been made by this process with a photovoltaic conversion efficiency of 15.2 percent under simulated AMO illumination. An ideality factor is 1.04 and a saturation current density of 9.6 times 10 to the minus 16th power A/square cm have been observed for these cells. These are the lowest (best) values reported to date for diffused structures in bulk InP.

Parat, K. K.↗

NASA NTRS1987

Characterization and modelling of open tube diffused n+p bulk InP solar cells

The authors describe the photovoltaic characteristics of an n+p junction solar cell fabricated on bulk InP by an open-tube-diffusion technique. Analysis of the forward characteristics shows that the forward current is dominated by recombination in the quasineutral regions, indicating that the fabrication technique produces a clean junction. Spectral response measurements are analyzed and more realistic boundary conditions are used to model the solar cell to determine important material and device parameters.

Bothra, S.↗