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Bradt, R. C.

Publications and source records attributed to Bradt, R. C..

15 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Thermal expansion and elastic anisotropies of SiC as related to polytype structure

The concept of the fraction of hexagonal stacking is used to describe the anisotropic thermal expansion coefficients of polytypes of SiC. The single crystal elastic anisotropy for the SiC polytype structures and the temperature dependencies of the anisotropies are examined. The anisotropic thermoelastic stress index for the 3C and 6H SiC polytypes are illustrated graphically. It is shown that this index is useful for predicting the most desirable crystal growth orientations for SiC whisker incorporation into composite matrices.

Li, Z.↗
NASA NTRS1989

Thermal expansion and elastic anisotropy in single crystal Al2O3 and SiC whiskers

The crystalline thermal expansion and elastic anisotropies of SiC and Al2O3 whiskers are considered in the process of evaluation of the anisotropy of the alpha-E product, the thermoelastic stress index. It is demonstrated to exhibit considerable crystalline anisotropy and a substantial temperature dependence, both of which will influence the thermal and residual stresses in composites using these materials for reinforcement.

Salem, J. A.↗
NASA NTRS1988

The single crystal elastic constants of hexagonal SiC to 1000 C

The relationships between the sound velocities in the cubic and hexagonal crystal structures and the tensor transformations for the two structures are applied to determine the elastic stiffnesses for the hexagonal structures of SiC to 1000 C. These results are then applied to calculate the polycrystalline elastic moduli, E and G, and their temperature variations. The calculated values for E and G at 20 C are 420 and 180 GPa; for (dE/dT) and (dG/dT), the values are -0.020 and -0.007 GPa/C, respectively.These agree well with published experimental values for E and G of dense polycrystalline alpha silicon carbides.

Li, Z.↗
NASA NTRS1987

Thermal expansion and thermal expansion anisotropy of SiC polytypes

The principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is developed that expresses the principal axial thermal expansion coefficients of all of the SiC polytypes. It is then applied to address the thermal expansion anisotropy of the noncubic SiC structures.

Li, Z.↗
NASA NTRS1986

Thermal expansion of the hexagonal (6H) polytype of silicon carbide

X-ray diffraction is presently used to determine the thermal expansion of the hexagonal (6H) polytype of alpha-SiC over the 20-1000 C range. The principal (alpha-11 and alpha-33) axial coefficients of thermal expansion can be expressed by second-order polynomials; the former is noted to be larger than the latter over the entire temperature range, while the thermal expansion anisotropy increases continuously with increasing temperature. The thermal expansion and thermal expansion anisotropy obtained are compared with previously published results for the (6H) polytype, and discussed with respect to the structure.

Li, Z.↗
NASA NTRS1986

Thermal expansion of the cubic (3C) polytype of SiC

Thermal expansion of the cubic beta or (3C) polytype of SiC was measured from 20 to 1000 C by the X-ray-diffraction technique. Over that temperature range, the coefficient of thermal expansion can be expressed by a second-order polynomial. It increases continuously from about 3.2 x 10 to the -6th/C at room temperature to 5.1 x 10 to the -6th/C at 1000 C, with an average value of 4.45 x 10 to the -6th/C between room temperature and 1000 C. This trend is compared with other published results and is discussed in terms of structural contributions to the thermal expansion.

Li, Z.↗
NASA NTRS1986

Thermal expansion of the hexagonal (4H) polytype of SiC

The principal axial coefficients of thermal expansion, alpha(11) and alpha(33), of the (4H) polytype of hexagonal alpha SiC have been determined by X-ray diffraction measurements in the temperature range 20-1000 C. Alpha(11) and alpha(33), derived from the lattice parameter measurements, were expressed as the second-order polynomials in temperature. Alpha(11) was found to be larger than alpha(33) over the entire temperature range, with a thermal expansion anisotropy factor A increasing from 0.04 at room temperature to 0.11 at 1000 C. The thermal expansion results for the (4H) structure were compared with previously published results for the cubic (3C) and the hexagonal (6H) SiC polytypes.

Li, Z.↗
NASA NTRS1986

Structural ceramics research

Ceramic research at the University of Washington, brittle materials design program, and NASA program research at the University of Washington are outlined.

Mueller, J. I.↗
NASA NTRS1984

The impact resistance of SiC and other mechanical properties of SiC and Si3N4

Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

Bradt, R. C.↗
NASA NTRS1982

Effects of oxidation and oxidation under load on strength distributions of Si3N4

The room-temperature strength distributions of a sintered and a hot-pressed Si3N4 were examined in the as-machined condition, after oxidation at 1370 C and after oxidation under load at 1370 C. The strength-controlling flaw populations were highly transient in nature. Both the duration of oxidation and the magnitude of the applied load were observed to effect changes in strength. This dynamic situation is related to both strengthening and weakening processes, which at times may occur simultaneously in the same strength distribution.

Easler, T. E.↗
NASA NTRS1981

Strength distributions of SiC ceramics after oxidation and oxidation under load

The room-temperature strength distributions of a sintered and a hot-pressed SiC were examined as-machined, after oxidation at 1370 C, and after oxidation under load at 1370 C. The strengths were observed to be dependent on both the duration of oxidation and the magnitude of the applied load. Processes resulting in both strengthening and weakening behavior were observed to occur, at times simultaneously within the same strength distribution. This dynamic situation indicates that the strength-controlling flaw populations are highly transient in nature.

Easler, T. E.↗
NASA NTRS1978

Low blow Charpy impact of silicon carbides

The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

Abe, H.↗
NASA NTRS1977

Surface finish effects and the strength-grain size relation in SiC

The effect of surface finish on the strength-grain size relation was investigated for dense hot-pressed SiC. Failure initiated predominantly via the propagation of extrinsic machining-induced flaws for the range of grain sizes and machining grit sizes studied. These results are consistent with the region of large-grain-size flaw control as delineated by Prochazka and Charles. The severity of machining-induced flaws, relative to the machining grit size, decreased with increasing machining grit size and decreasing SiC grain size.

Cranmer, D. C.↗
NASA NTRS1975

Effect of additions of coarse grains and fibers on the densification of a sinterable SiC

This note reports the effects on densification of independent additions of coarse equiaxed SiC grains and fibrous SiC that were mixed with fine beta-SiC to develop a duplex microstructure with improved toughness. The fine-matrix SiC did not contain excess boron and carbon. The equiaxed CVD beta-SiC was introduced in the fine beta-SiC matrix material in amounts of 5 and 10 wt%. Results indicate that the CVD beta-SiC, which is quite coarse, exhibits little indication of sinterability. The effect of these coarse-grained and fibrous additions on the sinterability of fine beta-SiC may result from a geometric type of interaction. This interpretation is reinforced by X-ray diffraction of the powders and sintered pellets via monochromatic CuK-alpha radiation; the diffraction patterns of the sintered composite structures are virtually a combination of those of the components. The addition of nonsinterable SiC to the sinterable material slightly reduces sinterability, the larger particles interacting geometrically with the fine matrix material to prevent complete densification.

Abe, H.↗