Engineering topics

Brandhorst, H. W.

Publications and source records attributed to Brandhorst, H. W..

10 records

NASA NTRS2002

Development of the Ultra-Light Stretched Lens Array

At the last IEEE (Institute of Electrical and Electronics Engineers) PVSC (Photovoltaic Specialists Conference), the new stretched lens array (SLA) concept was introduced. Since that conference, the SLA team has made significant advances in the SLA technology, including component level improvements, array level optimization, space environment exposure testing, and prototype hardware fabrication and evaluation. This paper will describe the evolved version of the SLA, highlighting the improvements in the lens, solar cell, rigid panel structure, and complete solar array wing. The near term SLA will provide outstanding wing level performance: greater than 180 W/kg specific power, greater than 300 W/sq m power density, greater than 300 V operational voltage, and excellent durability in the space environment.

O'Neill, M. J.↗

NASA NTRS1991

SEI needs for space nuclear power

The use of nuclear electric propulsion (NEP) and nuclear thermal propulsion (NTP) for transportation to the moon and Mars is examined, and the use on Mars and moon bases of thermal conversion subsystems based on either a Brayton or a Stirling cycle is examined. It is shown that both cycles are attractive alternatives for those applications where continuous field operation is desired. Nuclear power systems have a clear advantage with regard to the moon and a lesser one with regard to Mars.

Brandhorst, H. W.↗

NASA NTRS1986

Space power - Emerging opportunities

NASA programs directed towards the development of technologies to meet the cost-effective energy needs of future space missions are described. Consideration is given to the space photovoltaic program, which was developed along two paths: one leading to high-performance ultralight weight solar arrays, the other to high output arrays. The space power materials and energy storage technology are discussed, together with the developmental aspects of an advanced solar dynamic power system and its subsystems. Special attention is given to the Nasa SP-100 Advanced Technology Project and the free-piston Stirling engine technology for nuclear power application.

Brandhorst, H. W.↗

NASA NTRS1981

Gallium arsenide solar cells-status and prospects for use in space

Gallium Arsenide solar cells now equal or surpass the ubiquitous silicon solar cells in efficiency, radiation resistance, annealability, and in the capability for producing usable power output at elevated temperatures. NASA has developed a long-range research and development program to capitalize on these manifold advantages. In this paper we review the current state and future prospects for R&D in this promising solar cell material, and indicate the progress being made toward development of GaAs cells suitable for a variety of space missions. Results are presented from studies which demonstrate conclusively that GaAs cells can provide a net mission cost and weight savings for certain important mission classes.

Brandhorst, H. W.↗

NASA NTRS1980

Photovoltaic technology development for synchronous orbit

Accomplishments and expected benefits are summarized for the following efforts: (1) achieving silicon solar cell efficiency of 18% at 200 micron m to 250 micron m thickness; (2) reducing silicon cell radiation damage in geosynchronous orbit after 10 years to less than 15%; (3) demonstrating coplanar back contact 50 micron m thick silicon solar cells with efficiency of 14%; (4) demonstrating the feasibility of a radiation tolerant GaAs concentrator cell; (5) achieving 30% efficient photo conversion in the laboratory; (6) defining candidate concepts for 50% efficient electromagnetic conversion; and (7) demonstrating the technology for protecting arrays capable of 300W/kg after 10 years in geosynchronous orbit.

Brandhorst, H. W.↗

NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗

NASA NTRS1979

Photon-degradation effects in terrestrial silicon solar cells

The effect of instability in terrestrial solar cells and identification of mechanisms involved are presented. The effect is similar to photon-induced degradation in radiation-damaged space solar cells, with reduction in cell output in n(+)/p cells upon exposure to illumination or upon the application of a sufficiently high forward bias. It was found that the photon-degradation effect is caused by a recombination center identified as a complex of a lattice defect and a silver atom or cluster of atoms. The center is electrically inactive in its ground state but can be activated by raising the minority-carrier quasi-Fermi level to coincide with the position of the latent-center level in the band gap, or by direct excitation of electrons from the valence band to the latent-center level. Photon degradation can be prevented by avoiding the introduction of silver through the use of a clean diffusion system and clean initial material, or by eliminating lattice damage by sufficient surface material removal prior to diffusion and restricting diffusion temperatures to 875 C or below.

Weizer, V. G.↗

NASA NTRS1978

Photon degradation effects in terrestrial solar cells

A certain type of photon degradation effect has been observed experimentally in n(+)/p solar cells. It is found that this effect is caused by a recombination center, the formation of which requires the simultaneous presence of a lattice defect and a silver atom or complex of atoms. The center is electrically active in its equilibrium state; the energy level of the inactive center is located in the band gap, 0.37 eV below the conduction band. Conversion to an active recombination center can be brought about either by raising the minority carrier quasi-Fermi level to coincide with the position of the latent center level in the band gap or by the direct excitation of electrons from the valence band to the latent center level. Photon degradation can be prevented either by preventing the introduction of silver through the use of a clean diffusion system and clean initial material or by eliminating lattice damage through sufficient surface material removal prior to diffusion while at the same time restricting diffusion temperatures to 875 C or below.

Weizer, V. G.↗

NASA NTRS1975

V-grooved silicon solar cells

Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces have been made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80% of those collected in the valleys.

Baraona, C. R.↗

NASA NTRS1972

High intensity solar cell radiometer

Device can be employed under high intensity illumination conditions such as would occur in a close-solar-approach space mission or in monitoring high intensity lamps. Radiometer consists of silicon solar cells with thin semi-transparent coatings of aluminum deposited on the front surfaces to permit transmission of small percentage of light and reflect the remainder.

Brandhorst, H. W.↗