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Brandhorst, H. W., Jr.

Publications and source records attributed to Brandhorst, H. W., Jr..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗
NASA NTRS1976

Introduction to basic solar cell measurements

The basic approaches to solar cell performance and diagnostic measurements are described. The light sources, equipment for I-V curve measurement, and the test conditions and procedures for performance measurement are detailed. Solar cell diagnostic tools discussed include analysis of I-V curves, series resistance and reverse saturation current determination, spectral response/quantum yield measurement, and diffusion length/lifetime determination.

Brandhorst, H. W., Jr.↗
NASA NTRS1976

An investigation of impurity redistribution in diffused layer on /n+/-p silicon solar cells parameters

Recent calculations by Wang et al. (1974) have shown that the short-circuit current for silicon solar cells is sensitive to the impurity distribution in the diffused and base region. In the present work, these theoretical results were verified by experimentally investigating the impurity profile and sheet resistance of the diffused layers of (n+)-p silicon solar cells fabricated by normal diffusion processes and at subsequently various drive-in times. Impurity profiles of the n+ diffused layer, measured by differential Hall and resistivity technique, resemble the erfc distribution. The junction depth is larger as drive-in time increases. Measured short-circuit current is in agreement with calculated ones. Open-circuit voltage is independent of drive-in times, and its calculated values are consistent with capacitance-voltage measurements.

Wang, E. Y.↗
NASA NTRS1976

Photovoltaic test and demonstration project

The considered project consists of three subprojects related to applications, device performance and diagnostics, and endurance testing. The objectives of the applications subproject include the determination of the operating characteristics for a variety of photovoltaic conversion systems. A system test facility is being constructed in this connection and a prototype residence experiment is to be conducted. Market demand for solar cells is to be stimulated by demonstrating suitability of solar cells for specific near-term applications. Activities conducted in connection with device performance studies and diagnostics are also discussed along with developments in the area of endurance testing.

Forestieri, A. F.↗
NASA NTRS1975

Current status of silicon solar cell technology

Recent advances in solar cell technology have led to the development of laboratory cells with efficiencies above 15% and production cells with efficiencies in the area of 13%. The increased output is largely the result of increases in the short-circuit current. The most significant gain in the amount of light entering the cell has been obtained through surface texturing by chemical etching techniques. Sheet resistances resulting from phosphorus diffusion in the 800 C temperature range yield junction depths on the order of 0.1 micrometer, leading to significant increases in the blue region of the cell spectral response. The inclusion of a back surface field in 10 ohm-cm cells has produced an increase in open-circuit voltage of about 50 mV and an increase in the minority carrier lifetime. It appears that a low emitter efficiency of the diffused region is the cause of poor voltages. Future research will be primarily directed toward correcting this deficiency and toward the development of low cost production methods.

Brandhorst, H. W., Jr.↗
NASA NTRS1975

Review of Terrestrial Photovoltaic Measurements Workshop

Measurement methods for terrestrial solar cells require calibration standards to set simulator irradiance levels or to monitor solar irradiance in outdoor measurements. Measurements of solar cell performance in terrestrial sunlight are the most acceptable, but an artificial light source can be used for laboratory measurements.

Brandhorst, H. W., Jr.↗
NASA NTRS1975

High power laser apparatus and system

A high-power, continuous-wave laser was designed for use in power transmission and energy-collecting systems, and for producing incoherent light for pumping a laser material. The laser has a high repetitive pulsing rate per unit time, resulting in a high-power density beam. The laser is composed of xenon flash tubes powered by fast-charging capacitors flashed in succession by a high-speed motor connected to an automobile-type distributor.

Evans, J. C., Jr.↗
NASA NTRS1975

Interim solar cell testing procedures for terrestrial applications

This report presents an interim draft of procedures for testing solar cells for terrestrial applications that resulted from the terrestrial photovoltaic workshop sessions. A final version of the test procedures manual is planned for the summer of 1976.

Brandhorst, H. W., Jr.↗
NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1975

Effects of high doping levels silicon solar cell performance

The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1975

V-grooved silicon solar cells

Silicon solar cells with macroscopic V-shaped grooves and microscopically texturized surfaces were made by preferential etching techniques. Various conditions for potassium hydroxide and hydrazine hydrate etching were investigated. Optical reflection losses from these surface were reduced. The reduced reflection occurred at all wavelengths and resulted in improved short circuit current and spectral response. Improved collection efficiency is also expected from this structure due to generation of carriers closer to the cell junction. Microscopic point measurements of collected current using a scanning electron microscope showed that current collected at the peaks of the texturized surface were only 80 percent of those collected in the valleys.

Baraona, C. R.↗
NASA NTRS1975

Current status of silicon solar cell technology

In quest of higher efficiency, major progress has occurred in solar cell technology. Cell efficiency has climbed about 50 percent. Technical approaches leading to increased output include back surface fields, shallow junctions, improved antireflection coatings, surface texturizing, and fine grid patterns on the cell surface. The status of current solar cell technology and its incorporation into cell production is discussed. Research and development leading to improved performance and reduced cost are also described.

Brandhorst, H. W., Jr.↗
NASA NTRS1975

Dendritic web - A viable material for silicon solar cells

The dendritic web process is a technique for growing thin silicon ribbon from liquid silicon. The material is suitable for solar cell fabrication and, in fact, cells fabricated on web material are equivalent in performance to cells fabricated on Czochralski-grown material. A recently concluded study has delineated the thermal requirements for silicon web crucibles, and a detailed conceptual design has been developed for a laboratory growth apparatus.

Seidensticker, R. G.↗