Charge Trap Layer Supercharging for Improved Bit Reliability in 3D NAND Flash Under Proton Irradiation
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Teijeiro, Antonio Emilio↗
Engineering topics
Breeding, Matthew Luel
Publications and source records attributed to Breeding, Matthew Luel.
The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device
Here this work shows that the static random access memory (SRAM) error rate for a commercial 65-nm device in a dose rate environment can be highly dependent upon the integrated dose (dose rate × pulse duration). While the typical metric for such testing is dose rate upset (DRU) level in rad(Si)/s, a series of dose rate experiments at Little Mountain Test Facility (LMTF) shows dependence on the integrated dose. The error rate is also found to be dependent on the core voltage, and the preradiation value of the bits. We believe that these effects are explained by a well charge depletion caused by gamma ray photocurrent.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DFF Architecture Impact on SEU Response in Different Semiconductor Technologies.
Abstract not provided.
Black, Jeffrey↗