Engineering topics

Broder, J. D.

Publications and source records attributed to Broder, J. D..

At least 19 records

NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the 'flat-spot' power-loss phenomenon observed in silicon solar cells operating under deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model that explains the flat-spot power loss phenomenon is presented. Evidence suggests that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the P-N junction is destroyed and replaced with a metal semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are shown along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the "flat-spot" (FS) power loss phenomenon observed in silicon solar cells operating deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallurization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗

NASA NTRS1981

On the cause of the flat spot phenomenon observed in silicon solar cells at low temperatures and low intensities

The results of an effort to determine the mechanisms involved in the flat spot (FS) effect are given. It is suggested that the FS effect is due to a resistive metal-semiconductor-like (MSL) interface in parallel with the cell PN junction. Regions responsible for the FS effect lie under the front surface metallization in these cells, where the PN junction has been destroyed and replaced with a metal silicide-semiconductor interface. Such structural changes, which appear to be due to the thermally activated dissolution of the silicon, have been induced in cells as a result of isochronal heat treatments at temperatures between 450 C and 560 C. It has been found that a 650 A layer of Ta2O5 evaporated over the metallization is sufficient to prevent the underlying silicon from pitting during the subsequent heat treatment, although pitting at the metal silicon ambient interface could still be observed.

Weizer, V. G.↗

NASA NTRS1980

Recent developments in lightweight solar cell modules

Two types of lightweight solar cell modules were prepared. The goal is to achieve a module with a power to weight ratio of 350 watts per kilogram. Both structures use thin cells approximately 50 micrometers thick and glass covers approximately 75 micrometers thick. In one structure the glass is bonded to the module using 93-500 silicone adhesive; while the other relies on heat and pressure bonding using FEP as the adhesive. Specific powers of about 335 watts per kilogram were achieved.

Broder, J. D.↗

NASA NTRS1979

Photon-degradation effects in terrestrial silicon solar cells

The effect of instability in terrestrial solar cells and identification of mechanisms involved are presented. The effect is similar to photon-induced degradation in radiation-damaged space solar cells, with reduction in cell output in n(+)/p cells upon exposure to illumination or upon the application of a sufficiently high forward bias. It was found that the photon-degradation effect is caused by a recombination center identified as a complex of a lattice defect and a silver atom or cluster of atoms. The center is electrically inactive in its ground state but can be activated by raising the minority-carrier quasi-Fermi level to coincide with the position of the latent-center level in the band gap, or by direct excitation of electrons from the valence band to the latent-center level. Photon degradation can be prevented by avoiding the introduction of silver through the use of a clean diffusion system and clean initial material, or by eliminating lattice damage by sufficient surface material removal prior to diffusion and restricting diffusion temperatures to 875 C or below.

Weizer, V. G.↗

NASA NTRS1979

Improved method of solar-cell assembly

Method bonds solar-cell modules between rigid or flexible base and plastic protective cover. Method relies on using one of several commercially-available, transparent, silicone adhesives as bonding agent. Should it ever be necessary to repair or replace some part of assembly, it may be possible to remove cover without destroying package since adhesive remains flexible.

Broder, J. D.↗

NASA NTRS1978

Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

Weinberg, I.↗

NASA NTRS1978

Photon degradation effects in terrestrial solar cells

Reduction in cell output was observed in N(+)/P cells upon exposure to illumination or upon the application of a sufficiently high forward bias. Conversely, an enhancement in output was observed when P(+)/N cells were illuminated. Investigations performed on N(+)/P cells indicated that a recombination center located at E sub c - 0.37 eV in the forbidden band was responsible for the loss in output. The center was electrically inactive in its ground state but was activated either by raising the minority carrier quasi-Fermi level sufficiently close to the latent center energy level in the band gap, or by direct excitation of electrons from the valence band to the latent center level. The center was identified as a complex of a lattice defect and a silver atom or cluster of atoms.

Weizer, V. G.↗

NASA NTRS1978

Ultraviolet irradiation at elevated temperatures and thermal cycling in vacuum of FEP-A covered silicon solar cells

Experiments were designed and performed on silicon solar cells covered with heat-bonded FEP-A in an effort to explain the rapid degeneration of open-circuit voltage and maximum power observered on cells of this type included in an experiment on the ATS-6 spacecraft. Solar cells were exposed to ultraviolet light in vacuum at temperatures ranging from 30 to 105 C. The samples were then subjected to thermal cycling from 130 to -130 C. Inspection following irradiation indicated that all the covers remained physically intact. However, during the temperature cycling heat-bonded covers showed cracking. The test showed that heat-bonded FEP-A covers embrittle during UV exposure and the embrittlement is dependent upon sample temperature during irradiation. The results of the experiment suggest a probable mechanism for the degradation of the FEP-A cells on ATS-6.

Broder, J. D.↗

NASA NTRS1978

Ultraviolet irradiation at elevated temperatures and thermal cycling in vacuum of FEP-A covered silicon solar cells

Silicon solar cells covered with FEP-A were irradiated in vacuum with ultraviolet light and then subjected to thermal cycling. These accelerated laboratory conditions are believed to be equivalent to those experienced by FEP-A covered cells on the ATS-6 spacecraft and the results indicate a probable mechanism for the faster degradation of the FEP-A covered cells. Heat-bonded FEP-A covers apparently embrittle when exposed to four months of space UV radiation at elevated temperatures, and crack when subjected to thermal cycling during the eclipse period. Low energy proton radiation can then penetrate to the junction of the cell causing degradation of the open circuit voltage and maximum power to occur. An alternate method of application of FEP-A, such as with adhesives, may prevent such cracking.

Broder, J. D.↗

NASA NTRS1978

Photon degradation effects in terrestrial solar cells

A certain type of photon degradation effect has been observed experimentally in n(+)/p solar cells. It is found that this effect is caused by a recombination center, the formation of which requires the simultaneous presence of a lattice defect and a silver atom or complex of atoms. The center is electrically active in its equilibrium state; the energy level of the inactive center is located in the band gap, 0.37 eV below the conduction band. Conversion to an active recombination center can be brought about either by raising the minority carrier quasi-Fermi level to coincide with the position of the latent center level in the band gap or by the direct excitation of electrons from the valence band to the latent center level. Photon degradation can be prevented either by preventing the introduction of silver through the use of a clean diffusion system and clean initial material or by eliminating lattice damage through sufficient surface material removal prior to diffusion while at the same time restricting diffusion temperatures to 875 C or below.

Weizer, V. G.↗

NASA NTRS1976

Comparison of type A and C Fluorinated Ethylene Propylene (FEP) as cover materials for silicon solar cells

Fluorinated ethylene propylene film (FEP, 0.0127 cm thick) was heat and pressure laminated to silicon solar cells as a low cost substitute for quartz covers. The FEP-C, treated on one side for bonding, was compared to FEP-A, an untreated FEP. With FEP-A, a silane adhesion promoter was applied to the cells. The FEP-C covers delaminated during accelerated temperature-humidity testing and Earth environmental exposure testing; FEP-A covers were unchanged. No differences were observed in peel tests, but FEP-A is superior in its resistance to tearing and in retention of transmission properties after exposure to ultraviolet radiation.

Broder, J. D.↗

NASA NTRS1975

Effect of electron irradiation in vacuum on FEP-A silicon solar cell covers

The effect of irradiation on the light transmittance of ethylene-propylene-A (FEP-A) was investigated by measuring the short-circuit current of the cells after each of several electron dose increments, immediately after total irradiation, and 16 hours after total irradiation. Results indicated no apparent overall loss in transmission due to irradiation of FEP-A. However, filter wheel measurements revealed a 'darkening' of the FEP-A at the blue end of the spectrum. Some embrittlement of the FEP-A occurred at an accumulated dose of 67,500,000 rads.

Marsik, S. J.↗

NASA NTRS1975

Irradiation and measurements of fluorinated ethylene-propylene-A on silicon solar cells in vacuum

Silicon monoxide (SiO) coated silicon solar cells covered with fluorinated ethylene-propylene-A (FEP-A) were irradiated by 1-MeV electrons in vacuum. The effect of irradiation on the light transmittance of FEP-A was checked by measuring the short-circuit current of the cells while in vacuum after each dose increment, immediately after the irradiation, and again after a minimum elapsed time of 16 hr. The results indicated no apparent loss in transmission due to irradiation of FEP-A and no delamination from the SiO surface while the cells were in vacuum, but embrittlement of FEP-A occurred at the accumulated dose.

Marsik, S. J.↗

NASA NTRS1975

Effect of electron irradiation in vacuum on FEP-A silicon solar cell covers

Fluorinated ethylene-propylene-A (FEP-A) covers on silicon solar cells were irradiated with 1-MeV electrons, in vacuum, to an accumulated fluence equivalent to approximately 28 years in synchronous orbit. The effect of irradiation on the light transmittance of FEP-A was checked by measuring the short-circuit current of the cells after each dose increment. The results indicate no apparent overall loss in transmission due to irradiation of FEP-A. Filter wheel measurements revealed some darkening of the FEP-A at the blue end of the spectrum. Although no delamination from the cell surface was observed while in vacuum, embrittlement of FEP-A occurred at the accumulated dose.

Marsik, S. J.↗

NASA NTRS1974

Optimum design of antireflection coating for silicon solar cells

Based on classical electromagnetic theory, reflectivity calculations for various single and double optical coating systems for silicon solar cells are presented. From calculations and considerations of solar spectral response of the solar cells, the number and thickness of coating materials needed to obtain efficient solar cells can be predicted. Some experimental results on single layer coated cells are also presented for comparison with calculations, and agreement is good. By means of microwave transmission line analogy, the design of the multilayer coating can be simplified by using Tchebycheff polynomials.

Wang, E. Y.↗

NASA NTRS1974

The use of FEP Teflon in solar cell cover technology

FEP plastic film was used as a cover and as an adhesive to bond cover glasses to silicon solar cells. Various anti-reflective coatings were applied to cells and subsequently covered with FEP. Short-circuit currents were measured before and after application of the coating and of the FEP. FEP bonded to seven of the nine differently coated cells, with no change in the total short circuit current in four cases.

Broder, J. D.↗